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Interfacial effects on the optical behavior of Ge:ITO and Ge:ZnO nanocomposite films

机译：界面效应对Ge：ITO和Ge：ZnO纳米复合薄膜光学行为的影响

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摘要

Nanophase semiconductors are of interest for their unique, size-tunable solar spectral absorption characteristics as well as their potential to contribute to the improved energy conversion efficiency of photovoltaics (PV). Embedding these nanoparticles within electrically active transparent conductive oxides (TCO) can also provide an opportunity for enhanced, long-range carrier transport. However, differences in the atomic and electronic structure, dielectric behavior, and chemistry between the matrix and semiconductor phases highlight the influence of interfacial effects on the optical absorption properties of the composite. In this work, nanocomposites of Ge:indium tin oxide (Ge:ITO) and Ge:ZnO were fabricated with sequential RF-magnetron sputtering and annealed at temperatures from 310 to 550°C to investigate the impact of matrix identity on this interface and its contribution to nanostructure-mediated optical absorption. Transmission electron microscopy showed a decrease in Ge nanocrystal size relative to the initial semiconductor domain size in both matrices that was correlated with an increase in absorption onset energy after annealing. The effect was particularly pronounced in Ge:ITO composites in which Raman spectroscopy indicated the presence of germanium oxide at the semiconductorITO interface. These results support the primary contribution of carrier confinement in the Ge nanophase to the shifts in absorption onset energies observed.
机译：纳米相半导体因其独特的，可调节尺寸的太阳光谱吸收特性以及其有助于提高光伏（PV）能量转换效率的潜力而备受关注。将这些纳米颗粒嵌入电活性透明导电氧化物（TCO）中也可以提供增强的远程载流子传输的机会。但是，基质和半导体相之间原子和电子结构，介电行为和化学性质的差异突出了界面效应对复合材料光吸收性能的影响。在这项工作中，采用顺序射频磁控溅射法制备了锗铟锡氧化物（Ge：ITO）和Ge：ZnO的纳米复合材料，并在310至550°C的温度下进行退火，以研究基质同一性对该界面及其界面的影响。对纳米结构介导的光吸收的贡献。透射电子显微镜显示，相对于两种基质中的初始半导体畴尺寸，Ge纳米晶体尺寸的减小与退火后吸收开始能量的增加有关。在Ge：ITO复合材料中，这种效果尤为明显，其中拉曼光谱表明在半导体ITO界面处存在氧化锗。这些结果支持了Ge纳米相中载流子限制对观察到的吸收起始能量的转变的主要贡献。

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