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Synthesis of blue emitting InP/ZnS quantum dots through control of competition between etching and growth

机译：通过控制蚀刻与生长之间的竞争来合成发射蓝色InP / ZnS量子点

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Blue (<480nm) emitting Cd-free quantum dots (QDs) are in great demand for various applications. However, their synthesis has been challenging. Here we present blue emitting InP/ZnS core/shell QDs with a band edge emission of 475nm and a full width at half maximum of 39nm (215meV) from their quantum confined states. The drastic temperature drop immediately after mixing of the precursors and holding them at a temperature below 150°C was the critical factor for the synthesis of blue emitting QDs, because the blue QDs are formed by the etching of ultra-small InP cores by residual acetic acid below 150°C. Etching was dominant at temperatures below 150°C, whereas growth was dominant at temperatures above 150°C. ZnS shells were formed successfully at 150°C, yielding blue emitting InP/ZnS QDs. The colour of the InP/ZnS QDs depicted on the CIE 1931 chromaticity diagram is located close to the edge, indicating a pure blue colour compared to other InP-based QDs.
机译：发射各种无镉量子点（QD）的蓝光（<480nm）对各种应用都有很大的需求。但是，它们的合成一直具有挑战性。在这里，我们介绍了蓝色发光的InP / ZnS核/壳量子点，其带边发射为475nm，从其量子约束状态开始的最大半峰宽为39nm（215meV）。混合前驱体并将其保持在低于150°C的温度后，温度急剧下降是合成发蓝光QD的关键因素，因为蓝色QD是通过残留乙酸蚀刻超小InP核而形成的。低于150°C的酸。在低于150°C的温度下蚀刻占主导地位，而在高于150°C的温度下蚀刻则占据主导地位。 ZnS壳在150°C下成功形成，产生蓝色发射InP / ZnS QD。 CIE 1931色度图上描绘的InP / ZnS QD的颜色靠近边缘，与其他基于InP的QD相比，它表示纯蓝色。

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