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Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD system

机译:使用两温反应器CVD系统在介电表面上轻松合成石墨烯

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Direct deposition of graphene on a dielectric substrate is demonstrated using a chemical vapor deposition system with a two-temperature reactor. The two-temperature reactor is utilized to offer sufficient, well-proportioned floating Cu atoms and to provide a temperature gradient for facile synthesis of graphene on dielectric surfaces. The evaporated Cu atoms catalyze the reaction in the presented method. C atoms and Cu atoms respectively act as the nuclei for forming graphene film in the low-temperature zone and the zones close to the high-temperature zones. A uniform and high-quality graphene film is formed in an atmosphere of sufficient and well-proportioned floating Cu atoms. Raman spectroscopy, scanning electron microscopy and atomic force microscopy confirm the presence of uniform and high-quality graphene.
机译:使用具有两温反应器的化学气相沉积系统演示了石墨烯在介电基体上的直接沉积。两温反应器用于提供足够的,比例匀称的浮动Cu原子,并为在介电表面上轻松合成石墨烯提供温度梯度。在提出的方法中,蒸发的铜原子催化反应。 C原子和Cu原子分别充当在低温区和靠近高温区的区域中形成石墨烯膜的核。在充分且均匀分布的浮动Cu原子气氛中形成均匀且高质量的石墨烯膜。拉曼光谱,扫描电子显微镜和原子力显微镜证实存在均一且高质量的石墨烯。

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