Centimeter-long Ta_(3N)5 nanobelts were synthesized by a reaction of centimeter-long TaS3 nanobelt templates with flowing NH3 at 800 °C for 2 h. The nanobelts have cross-sections of about 50 × 100 nm~2, and lengths up to 0.5 cm. A field effect transistor (FET) made of a single Ta3N5 nanobelt was fabricated on silica/silicon substrate. The electric transport of the individual nanobelt revealed that the nanobelt is a semiconductor with a room-temperature resistivity of 11.88 Ω m, and can be fitted well with an empirical formula ρ = 10831 exp(-T/43.8) - 22.6, where ρ is resistivity (Ω m) and T is absolute temperature (K). The FET showed decent photoconductive performance under light irradiation in the range 250-630 nm. The photocurrent increased by nearly 10 times the dark current under 450 nm light irradiation at an applied voltage of 5.0 V.
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