InAs_(1-x)P_x nanowires grown by catalyst-free molecular-beam epitaxy

Isakov I.; Panfilova M.; Sourribes M.J.L.; Tileli V.; Porter A.E.; Warburton P.A.

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InAs_(1-x)P_x nanowires grown by catalyst-free molecular-beam epitaxy

机译：无催化剂分子束外延生长的InAs_（1-x）P_x纳米线

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We report on the self-catalysed growth of vertical InAs_(1-x)P_x nanowires on Si(111) substrates by solid-source molecular-beam epitaxy. High-resolution transmission electron microscopy revealed the mixed wurtzite and zincblende structure of the nanowires. Energy dispersive x-ray spectroscopy and x-ray diffraction measurements were used to study the phosphorus content x in the InAs_(1-x)P_x nanowires, which was shown to be in the range 0-10 %. The dependence of phosphorus incorporation in the nanowires on the phosphorus flux in the growth chamber was investigated. The incorporation rate coefficients of As and P in InAs1xPx nanowires were found to be in the ratio 10 ± 5 to 1.

机译：我们报告了通过固体源分子束外延在Si（111）衬底上垂直InAs_（1-x）P_x纳米线的自催化生长。高分辨率透射电子显微镜显示纳米线的混合纤锌矿和闪锌矿结构。使用能量色散x射线光谱法和x射线衍射测量来研究InAs_（1-x）P_x纳米线中的磷含量x，其显示为0-10％。研究了纳米线中磷的掺入对生长室内磷通量的依赖性。发现InAs1xPx纳米线中As和P的掺入率系数为10±5比1。

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《Nanotechnology》 |2013年第8期|共7页
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Isakov I.; Panfilova M.; Sourribes M.J.L.; Tileli V.; Porter A.E.; Warburton P.A.;
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1. InAs_(1-x)P_x nanowires grown by catalyst-free molecular-beam epitaxy [J] . Isakov I., Panfilova M., Sourribes M.J.L., Nanotechnology . 2013,第8期

机译：无催化剂分子束外延生长的InAs_（1-x）P_x纳米线
2. Electrical properties of InAs_(1-x)Sb_x and InSb nanowires grown by molecular beam epitaxy [J] . Claes Thelander, Philippe Caroff, Sebastien Plissard, Applied Physics Letters . 2012,第23期

机译：通过分子束外延生长的InAs_（1-x）Sb_x和InSb纳米线的电学性质
3. Anisotropy of selective epitaxy in nanoscale-patterned growth: GaAs nanowires selectively grown on a SiO_2-patterned (001) substrate by molecular-beam epitaxy [J] . S. C. Lee, L. R. Dawson, S. R. J. Brueck, Journal of Applied Physics . 2005,第11期

机译：纳米尺度生长中选择性外延的各向异性：通过分子束外延选择性生长在SiO_2图案（001）衬底上的GaAs纳米线
4. Optical Characterization of Zn{sub}(1-x)Cd{sub}xO Alloys Grown by Molecular-Beam Epitaxy [C] . I. A. Buyanova, X. J. Wang, W. M. Chen, Electrochemical Society . 2006

机译：分子束外延生长的Zn {Sub}（1-X）Cd {亚} XO合金的光学表征
5. Ultra-high B doping during Si(1-x)Ge(x)(001) gas-source molecular-beam epitaxy: A mechanistic study of layer growth kinetics, dopant incorporation, electrical activation, and carrier transport. [D] . Glass, Glenn Aaron. 1999

机译：Si（1-x）Ge（x）（001）气源分子束外延期间的超高B掺杂：层生长动力学，掺杂剂掺入，电激活和载流子传输的机理研究。
6. Evolution of the Length and Radius of Catalyst-Free III–VNanowires Grown by Selective Area Epitaxy [O] . Vladimir G. Dubrovskii, * 2019

机译：无催化剂III–V的长度和半径的演变选择性区域外延生长的纳米线
7. lnAs/Ga_(1-x) ln_xSb strained-layer superlattices grown by molecular-beam epitaxy [O] . Chow D. H., Miles R. H., Söderström J. R., 1990

机译：分子束外延生长的lnAs / Ga_（1-x）ln_xSb应变层超晶格
8. Low-Temperature Optical Absorption in Al(x)Ga(1-x)As Grown by Molecular-Beam Epitaxy [R] . Pearah, P. J., Masselink, W. T., Klem, J., 1985

机译：分子束外延生长al（x）Ga（1-x）的低温光吸收

InAs_(1-x)P_x nanowires grown by catalyst-free molecular-beam epitaxy

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