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Photoluminescence study of as-grown vertically standing wurtzite InP nanowire ensembles

机译：垂直生长纤锌矿InP纳米线集成体的光致发光研究

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摘要

We demonstrate a method that enables the study of photoluminescence of as-grown nanowires on a native substrate by non-destructively suppressing the contribution of substrate photoluminescence. This is achieved by using polarized photo-excitation and photoluminescence and by making an appropriate choice of incident angle of both excitation beam and photoluminescence collection direction. Using T_E-polarized excitation at a wavelength of 488 nm at an incident angle of ～70° we suppress the InP substrate photoluminescence relative to that of the InP nanowires by about 80 times. Consequently, the photoluminescence originating from the nanowires becomes comparable to and easily distinguishable from the substrate photoluminescence. The measured photoluminescence, which peaks at photon energies of ～1.35 eV and ～1.49 eV, corresponds to the InP substrate with zinc-blende crystal structure and to the InP nanowires with wurtzite crystal structure, respectively. The photoluminescence quantum yield of the nanowires was found to be ～20 times lower than that of the InP substrate. The nanowires, grown vertically in a random ensemble, neither exhibit substantial emission polarization selectivity to the axis of the nanowires nor follow excitation polarization preferences observed previously for a single nanowire.
机译：我们演示了一种方法，该方法能够通过非破坏性地抑制基质光致发光的作用来研究天然基质上生长的纳米线的光致发光。这是通过使用偏振的光激发和光致发光和通过使两个激发光束和光致发光采集方向的入射角度的适当选择来实现。使用488 nm波长的T_E偏振激发光，入射角约为70°，相对于InP纳米线，InP衬底的光致发光抑制了约80倍。因此，源自纳米线的光致发光变得可与基板光致发光相媲美并容易区分。测得的光致发光峰在〜1.35 eV和〜1.49 eV的光子能量处达到峰值，分别对应于具有闪锌矿晶体结构的InP衬底和具有纤锌矿晶体结构的InP纳米线。发现纳米线的光致发光量子产率比InP衬底低约20倍。在无规集合体中垂直生长的纳米线既没有表现出对纳米线轴的实质性发射极化选择性，也没有遵循先前对于单个纳米线观察到的激发极化偏好。

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