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Study of charge separation and interface formation in a single nanorod CdS-Cu_xS heterojunction solar cell using Kelvin probe force microscopy

机译:使用开尔文探针力显微镜研究单个纳米棒CdS-Cu_xS异质结太阳能电池中的电荷分离和界面形成

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In the present investigation, Kelvin probe force microscopy (KPFM) is used to study the charge separation, shift in Fermi level position and interfacial depletion region formation in a single cadmium sulfide (CdS)-copper sulfide (Cu_xS) nanorod heterojunction fabricated using hydrothermal synthesis and a topotaxial conversion reaction. A detailed analysis of KPFM images in the dark shows work function (or Fermi energy) values of CdS and Cu_xS regions consistent with the energy band diagram of the CdS-Cu_xS junction. Under illumination, Fermi energy levels of both the Cu_xS and CdS shift away from the vacuum level by 0.2 and 0.4 eV, respectively, which is very different from the behaviour expected in the case of a bulk p-n junction. The existence of interfacial regions topographically placed between ITO-CdS and CdS-Cu_xS with intermediate work function values as well as the observed narrowing of the work function spread under illumination are important for understanding the fundamental process of charge separation and junction formation in semiconductor nanorod solar cells.
机译:在本研究中,开尔文探针力显微镜(KPFM)用于研究使用水热合成法制备的单个硫化镉(CdS)-硫化铜(Cu_xS)纳米棒异质结中的电荷分离,费米能级位置的移位和界面耗尽区的形成。和光轴转化反应。在黑暗中对KPFM图像进行的详细分析显示,CdS和Cu_xS区域的功函数(或费米能量)值与CdS-Cu_xS结的能带图一致。在光照下,Cu_xS和CdS的费米能级分别偏离真空级0.2 eV和0.4 eV,这与本体p-n结的预期行为有很大不同。 ITO-CdS和CdS-Cu_xS之间具有拓扑结构的界面区域的存在以及中间功函数值的存在以及观察到的在照明下功函数散布的变窄对于理解半导体纳米棒太阳能中电荷分离和结形成的基本过程很重要细胞。

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