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Graphene-based waveguide integrated dielectric-loaded plasmonic electro-absorption modulators

机译：基于石墨烯的波导集成电介质负载等离子体电吸收调制器

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摘要

Theoretical investigations of graphene-based electro-optic plasmonic modulators with a dielectric ridge were analyzed and the results were presented. The effects of different ridge materials and different spacer dielectric functions were analyzed, showing that a 3 dB modulation with a 65 nm-long waveguide is possible with dielectric-loaded surface plasmon polariton waveguides (DLSPPWs), resulting in an energy per bit only 0.08 fJ/bit. The figure of merit, defined as the ratio between the extinction ratio and the insertion loss, was found to be about 5.2 with a low refractive index ridge and increased to over 17.3 for a high refractive index Si ridge, compared to 3.5 calculated and measured with photonic graphene-based waveguides. Additionally, it was shown that further improvement in terms of the figure of merit is possible with long-range dielectric-loaded surface plasmon polariton waveguides (LR-DLSPPWs), where it was calculated to exceed 72. For such waveguides, a 3 dB modulation was achieved with 10 μm-long waveguides with an energy per bit of 15.8 fJ/bit. The wavelength dependence of the graphene conductivity and, consequently, the attenuation of the waveguide were analyzed for different chemical potentials. It was shown that gate voltage applied across the graphene layers shifts the attenuation curve to shorter wavelengths, with the 3 dB modulation bandwidth exceeding 15 THz for a 12 μm-long DLSPP waveguide.
机译：分析了具有介电脊的基于石墨烯的电光等离子体激元调制器的理论研究，并给出了结果。分析了不同脊材料和不同间隔物介电功能的影响，结果表明，使用介质加载的表面等离激元极化波导（DLSPPW），可以使用65 nm长的波导进行3 dB的调制，从而每位能量仅为0.08 fJ /位。品质因数（定义为消光比与插入损耗之比）在低折射率脊的情况下约为5.2，而在高折射率Si脊的情况下则提高到17.3以上，而在使用低折射率脊时计算和测量的是3.5基于光子石墨烯的波导。此外，结果表明，使用长距离介质加载的表面等离激元极化波导（LR-DLSPPW）可以进一步改善品质因数，其计算值超过72。对于此类波导，采用3 dB调制用10μm长的波导实现的每比特能量为15.8 fJ / bit。对于不同的化学势，分析了石墨烯电导率与波长的关系，以及波导的衰减。结果表明，跨石墨烯层施加的栅极电压将衰减曲线移动到较短的波长，对于12μm长的DLSPP波导，其3 dB调制带宽超过15 THz。

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