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Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

机译：具有大存储窗口的晶体管存储设备，使用密集堆积的疏水性电荷捕获金属纳米颗粒阵列的多层堆叠

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摘要

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au-NPs) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au-NP)(n) films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO2 gate dielectric layer. For a single AuNP layer (i. e. PAD/TOA-Au-NP)(1)) with a number density of 1.82 x 10(12) cm(-2), the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au-NP layers exhibited excellent programmable memory properties (i.e. a large memory window (Delta Vth) exceeding 145 V, a fast switching speed (1 mu s), a high program/erase (P/E) current ratio (greater than 106) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate.
机译：有机场效应晶体管（OFET）存储器已经从具有相对低存储容量的低成本，灵活的电子产品迅速发展到需要大容量存储器的存储设备，例如智能存储卡或固态硬盘。在这里，我们报告了基于密集堆积的疏水金属NP层的多层堆叠的高容量OFET存储器，代替了基于单个电荷俘获层的传统晶体管存储系统。我们证明了通过控制吸附等温线行为，多层堆叠结构和金属NPs的疏水性可以显着提高设备的存储性能。对于本研究，将四辛基铵（TOA）稳定化的Au纳米颗粒（TOA-Au-NPs）与胺官能化的聚（酰胺基胺）树枝状聚合物（PAD）连续逐层组装（LbL）。形成的（PAD / TOA-Au-NP）（n）膜在隧道介电层和SiO2栅极介电层之间的界面处用作多层堆叠电荷俘获层。对于具有1.82 x 10（12）cm（-2）数密度的单个AuNP层（即PAD / TOA-Au-NP）（1），OFET存储设备的存储窗口测得约为97 V.用四个Au-NP层制备的多层堆叠的OFET存储器件表现出出色的可编程存储性能（即，超过145 V的大存储窗口（Delta Vth），快速切换速度（1μs），高编程/擦除（ （P / E）电流比（大于106）和良好的电气可靠性）在栅极施加的100 V工作电压下，在相对较短的时间范围内进行写入和擦除。

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