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InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

机译：用于快速闪烁应用的InGaN / GaN多量子阱：放射发光和光致发光研究

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摘要

We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic vapour phase epitaxy and characterize it by fine XRD measurements. We demonstrate its suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. The photoluminescence and radioluminescence were measured: we have shown that the ratio of the intensity of quantum well (QW) exciton luminescence to the intensity of the yellow luminescence (YL) band I_(QW)/I_(YL) depends strongly on the type and intensity of excitation. Slower scintillation decay measured at YL band maximum confirmed the presence of several radiative recombination centres responsible for wide YL band, which also partially overlap with the QW peak. Further improvements of the structure are suggested, but even the presently reported decay characteristics of the excitonic emission in MQW are better compared to the currently widely used single crystal YAP:Ce or YAG:Ce scintillators. Thus, such a type of a semiconductor scintillator is highly promising for fast detection of soft x-ray and related beam diagnostics.
机译：我们通过金属-有机气相外延制备InGaN / GaN多量子阱（MQW）结构，并通过精细的XRD测量对其进行表征。我们证明了其适用于闪烁体的应用，包括在扩展的动态和时间范围内对纳秒级脉冲软X射线源下波长分辨的闪烁响应进行独特的测量。测量了光致发光和放射致发光：我们已经表明，量子阱（QW）激子发光强度与黄色发光（YL）带I_（QW）/ I_（YL）的强度之比在很大程度上取决于类型和激发强度。在YL谱带最大值处测得的较慢的闪烁衰减证实了存在多个负责宽YL谱带的辐射复合中心，这些中心也与QW峰部分重叠。建议进一步改善结构，但与目前广泛使用的单晶YAP：Ce或YAG：Ce闪烁体相比，MQW中激子发射的当前衰减特征甚至更好。因此，这种类型的半导体闪烁体对于软X射线和相关束诊断的快速检测是非常有前途的。

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