• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Synthesis of wafer-scale hexagonal boron nitride monolayers free of aminoborane nanoparticles by chemical vapor deposition
【24h】

Synthesis of wafer-scale hexagonal boron nitride monolayers free of aminoborane nanoparticles by chemical vapor deposition

机译：通过化学气相沉积法合成无氨基硼烷纳米粒子的晶圆级六角形氮化硼单层

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hexagonal boron nitride (h-BN) has gained great attention as a two-dimensional material, along with graphene. In this work, high-quality h-BN monolayers were grown in wafer scale (7 × 7 cm~2) on Cu substrates by using low-pressure chemical vapor deposition (LPCVD). We created h-BN monolayers that were free of polymeric aminoborane (BH_2NH_2) nanoparticles, which are undesirable by-products of the ammonia borane precursor, by employing a simple filtering system in the CVD process. The optical band gap of 6.06 eV and sharp and symmetric Raman peak measured at 1371 cm~(-1) indicate the synthesis of monolayer h-BN. In addition, spherical aberration (C_S)-corrected high-resolution transmission electron microscopic images confirm the production of a single-layer hexagonal array of boron and nitrogen atoms.
机译：六方氮化硼（h-BN）作为二维材料与石墨烯一起受到了广泛关注。在这项工作中，通过使用低压化学气相沉积（LPCVD）在铜衬底上以晶片级（7×7 cm〜2）生长高质量的h-BN单层。通过在CVD工艺中采用简单的过滤系统，我们创建了不含聚合氨基硼烷（BH_2NH_2）纳米颗粒的h-BN单层，该纳米颗粒是氨硼烷前体的不良副产物。 6.06 eV的光学带隙和在1371 cm〜（-1）处测得的对称对称的拉曼峰表明了单层h-BN的合成。此外，经球差（C_S）校正的高分辨率透射电子显微图像确认了硼和氮原子的单层六边形阵列的产生。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号