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Kelvin probe microscopy and electronic transport measurements in reduced graphene oxide chemical sensors

机译：还原氧化石墨烯化学传感器中的开尔文探针显微镜和电子传输测量

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摘要

Reduced graphene oxide (RGO) is an electronically hybrid material that displays remarkable chemical sensing properties. Here, we present a quantitative analysis of the chemical gating effects in RGO-based chemical sensors. The gas sensing devices are patterned in a field-effect transistor geometry, by dielectrophoretic assembly of RGO platelets between gold electrodes deposited on SiO_2/Si substrates. We show that these sensors display highly selective and reversible responses to the measured analytes, as well as fast response and recovery times (tens of seconds). We use combined electronic transport/Kelvin probe microscopy measurements to quantify the amount of charge transferred to RGO due to chemical doping when the device is exposed to electron-acceptor (acetone) and electron-donor (ammonia) analytes. We demonstrate that this method allows us to obtain high-resolution maps of the surface potential and local charge distribution both before and after chemical doping, to identify local gate-susceptible areas on the RGO surface, and to directly extract the contact resistance between the RGO and the metallic electrodes. The method presented is general, suggesting that these results have important implications for building graphene and other nanomaterial-based chemical sensors.
机译：氧化石墨烯（RGO）是一种电子混合材料，具有出色的化学感应特性。在这里，我们对基于RGO的化学传感器中的化学门控效果进行了定量分析。通过在沉积在SiO_2 / Si衬底上的金电极之间的RGO血小板介电电泳，以场效应晶体管的几何图形对气体传感器件进行构图。我们表明，这些传感器对被测分析物显示出高度选择性和可逆的响应，以及快速的响应和恢复时间（数十秒）。当设备暴露于电子受体（丙酮）和电子施主（氨）分析物时，我们使用结合的电子传输/开尔文探针显微镜测量来量化由于化学掺杂而转移到RGO的电荷量。我们证明了该方法使我们能够获得化学掺杂之前和之后的表面电势和局部电荷分布的高分辨率图，以识别RGO表面上的局部栅极敏感区域，并直接提取RGO之间的接触电阻和金属电极。提出的方法是通用的，表明这些结果对构建石墨烯和其他基于纳米材料的化学传感器具有重要意义。

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