High photosensitivity few-layered MoSe_2 back-gated field-effect phototransistors

A Abderrahmane; P J Ko; T V Thu; S Ishizawa; T Takamura; A Sandhu

首页> 外文期刊>Nanotechnology >High photosensitivity few-layered MoSe_2 back-gated field-effect phototransistors

【24h】

High photosensitivity few-layered MoSe_2 back-gated field-effect phototransistors

机译：高光敏性几层MoSe_2背栅场效应光电晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe_2 back-gated field-effect transistors, with a mobility of 19.7 cm~2 V~(-1) s~(-1) at room temperature. We obtained an ultrahigh photoresponsivity of 97.1AW~(-1) and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe_2-based devices are promising for photoelectronic applications.

机译：本文报道了以迁移率为19.7 cm〜2 V〜（-1）s〜（-1）的几层MoSe_2背栅场效应晶体管为基础的高灵敏光电晶体管的制造和光电性能。在室温下。我们在室温下使用532 nm激光激发，获得了97.1AW〜（-1）的超高光敏度和226.66％的外部量子效率（EQE）。在接近阈值栅极电压时，光响应性得到了改善;然而，选择二氧化硅作为栅氧化物代表了最终性能的限制因素。由于它们的高光响应性和外部量子效率，基于MoSe_2的几层器件有望用于光电应用。

著录项

来源
《Nanotechnology》 |2014年第36期|共5页
作者
A Abderrahmane; P J Ko; T V Thu; S Ishizawa; T Takamura; A Sandhu;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种 eng
中图分类
关键词
2D materials; optoelectronic; phototransistor; photodetector; molybdenum diselenide;

机译：二维材料;光电;光电晶体管;光电探测器;二硒化钼;

相似文献

外文文献
中文文献
专利

1. High photosensitivity few-layered MoSe_2 back-gated field-effect phototransistors [J] . A Abderrahmane, P J Ko, T V Thu, Nanotechnology . 2014,第36期

机译：高光敏性几层MoSe_2背栅场效应光电晶体管
2. Sulfiphilic Few-Layered MoSe_2 Nanoflakes Decorated rGO as a Highly Efficient Sulfur Host for Lithium-Sulfur Batteries [J] . Tian Wenzhi, Xi Baojuan, Feng Zhenyu, Advanced energy materials . 2019,第36期

机译：嗜硫的几层MoSe_2纳米薄片将rGO装饰为锂硫电池的高效硫主体
3. High photoresponsivity of multilayer MoSe_2 phototransistors decorated with Au nanoseeds [J] . Seongin Hong, Seungho Baek, Sunkook Kim Applied Physics Letters . 2021,第13期

机译：多层MOSE_2光电晶体管的高光响应性，用Au纳米酶装饰
4. Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate Oxide [C] . Debarghya Sarkar, Sizhe Weng, Yunpeng Xu, Device Research Conference . 2019

机译：直接在非晶栅极氧化物上生长的低温InP制成的背栅光电晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Environmental Effects on the Electrical Characteristics of Back-Gated WSe2 Field-Effect Transistors [O] . Francesca Urban, Nadia Martucciello, Lisanne Peters, 2018

机译：环境对背栅WSe2场效应晶体管电特性的影响
7. Photoconductivity of few-layered p-WSe2 phototransistors via multi-terminal measurements [O] . Pradhan, Nihar R., Garcia, Carlos, Holleman, Joshua, 2016

机译：几层p-Wse2光电晶体管的光电导率多端测量

High photosensitivity few-layered MoSe_2 back-gated field-effect phototransistors

摘要

著录项

相似文献

相关主题

期刊订阅