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首页> 外文期刊>Nanotechnology >Ultrahigh-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity
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Ultrahigh-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

机译：通过等离子刻蚀制造的超高高纵横比的硅纳米线：等离子处理，针对粘附力，毛细力和疏油性的机械稳定性分析

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Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min~(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowiresanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.
机译：研究了使用时分深反应离子刻蚀（DRIE）工艺进行的室温深Si刻蚀，以制造垂直于硅基板的超高纵横比Si纳米线（SiNWs）。纳米图案化是通过自上而下的技术（例如电子束光刻）或胶体聚苯乙烯（PS）球自组装实现的。如果可以容忍直径和位置的缺陷，则后者是一种更快，更经济的方法。我们使用经典的质量流量控制器（脉冲上升时间为几秒钟）演示了从100 nm以下到几微米的线径，以及100：1以上的长宽比（AR），蚀刻速率超过1μmmin〜（-1）。这些纳米线的机械稳定性在理论上和实验上针对粘附力和毛细作用力进行了研究。结果表明，在间距为1μm的AR的50：1数量级以上时，SiNW由于它们之间的粘附力而倾向于弯曲。如此大的粘附力归因于硅的高表面能。用水润湿SiNWs并干燥也会引起毛细作用力。我们发现，与干燥的SiNW的粘附力相比，毛细作用力对于SiNW的塌陷/弯曲可能不那么重要，这与表面能比硅低得多的聚合物纳米线/纳米柱所观察到的相反。最后，我们证明了SiNW阵列具有疏油和超疏油性能，即由于DRIE工艺产生的凹角分布和设计合理的间距，它们对多种液体和油类均表现出优异的抗湿性能。

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