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首页> 外文期刊>Nanotechnology >Colloidal pattern replication through contact photolithography operated in a 'Talbot-Fabry-Perot' regime
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Colloidal pattern replication through contact photolithography operated in a 'Talbot-Fabry-Perot' regime

机译：通过在“ Talbot-Fabry-Perot”方案中进行的接触式光刻技术进行胶体图案复制

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摘要

We describe a method for continuous colloidal pattern replication using contact photolithography. Cr-on-quartz masks are fabricated using colloidal nanosphere lithography and subsequently used as photolithography stamps. Hexagonal pattern arrangements with different dimensions (980, 620 and 480 nm, using colloidal particles with these respective diameters) have been studied. When the mask and the imaged resist layer were in intimate contact, a high fidelity pattern replica was obtained after photolithographic exposure and processing. In turn, the presence of an air gap in between was found to affect the projected image on the photoresist layer, with a strong dependence on the mask feature size and height of the air gap. Pattern replication, inversion and hybridization were achieved for the 980 nm period mask; no hybridization for the 620 nm one; and only pattern replication for the 480 nm one. These results are interpreted in the framework of a 'Talbot-Fabry-Perot' effect. Numerical simulations corroborate the experimental findings, providing insight into the processes involved and highlighting the important parameters affecting the exposure pattern. This approach allows complex subwavelength patterning and is relevant for three-dimensional layer-by-layer printing.
机译：我们描述了一种使用接触光刻法连续胶体图案复制的方法。使用胶体纳米球光刻技术制造石英上的Cr掩模，然后将其用作光刻印章。已经研究了具有不同尺寸（980、620和480 nm，使用具有这些各自直径的胶体颗粒）的六边形图案排列。当掩模和成像的抗蚀剂层紧密接触时，在光刻曝光和处理之后获得高保真度的图案复制品。反过来，发现在两者之间存在气隙会影响在光致抗蚀剂层上的投影图像，这与掩模特征尺寸和气隙高度高度相关。 980 nm周期掩模实现了图案复制，反转和杂交。 620 nm无杂交;而且只有480 nm的图案复制。这些结果在“ Talbot-Fabry-Perot”效应的框架中得到解释。数值模拟证实了实验结果，提供了对所涉及过程的洞察力，并突出了影响曝光模式的重要参数。该方法允许复杂的亚波长图案化，并且与三维逐层打印有关。

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