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Lithography and doping in strained Si towards atomically precise device fabrication

机译：光刻和在应变硅中掺杂以实现原子精确的器件制造

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摘要

We investigate the ability to introduce strain into atomic-scale silicon device fabrication by performing hydrogen lithography and creating electrically active phosphorus δ-doped silicon on strained silicon-on-insulator (sSOI) substrates. Lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat sSOI(001) surface with a scanning tunnelling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process was investigated allowing us to pattern feature-sizes from several microns down to 1.3 nm. In parallel we have investigated the impact of strain on the electrical properties of P:Si δ-doped layers. Despite the presence of strain inducing surface variations in the silicon substrate we still achieve high carrier densities (>1.0 × 10~(14) cm~(-2)) with mobilities of ~100 cm~2 V~(-1) s~(-1). These results open up the possibility of a scanning-probe lithography approach to the fabrication of strained atomic-scale devices in silicon.
机译：我们研究通过进行氢光刻和在应变绝缘体上硅（sSOI）衬底上创建电活性磷δ掺杂硅来将应变引入原子级硅器件制造的能力。通过在超高真空下操作的扫描隧道显微镜尖端，从吸附在干净的，原子平坦的sSOI（001）表面上的H抗蚀剂层中选择性地脱附氢原子，获得光刻图案。研究了针尖到样品的偏压对光刻工艺的影响，使我们能够图案化从几微米到1.3 nm的特征尺寸。同时，我们研究了应变对P：Siδ掺杂层电学性能的影响。尽管在硅衬底中存在引起应变的表面变化，我们仍然以〜100 cm〜2 V〜（-1）s〜的迁移率实现​​了高载流子密度（> 1.0×10〜（14）cm〜（-2））。 （-1）。这些结果为在硅中制造应变原子级器件制造扫描探针光刻方法提供了可能性。

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