A route for fabricating printable photonic devices with sub-10 nm resolution

Pina-Hernandez C.; Lacatena V.; Calafiore G.; Dhuey S.; Kravtsov K.; Goltsov A.; Olynick D.; Yankov V.; Cabrini S.; Peroz C.

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A route for fabricating printable photonic devices with sub-10 nm resolution

机译：制造分辨率低于10 nm的可打印光子器件的途径

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A novel and robust route for high-throughput, high-performance nanophotonics-based direct imprint of high refractive index and low visible wavelength absorption materials is presented. Sub-10 nm TiO_2 nanostructures are fabricated by low-pressure UV-imprinting of an organic-inorganic resist material. Post-imprint thermal annealing allows optical property tuning over a wide range of values. For instance, a refractive index higher than 2.0 and an extinction coefficient close to zero can be achieved in the visible wavelength range. Furthermore, the imprint resist material permits fabrication of crack-free nanopatterned films over large areas and is compatible for fabricating printable photonic structures.

机译：为高通量，高性能，基于纳米光子学的高折射率和低可见光吸收材料的直接压印提供了一种新颖而可靠的途径。通过对有机无机抗蚀剂材料进行低压UV压印来制造亚10纳米TiO_2纳米结构。压印后热退火可以在很宽的数值范围内调节光学性能。例如，可以在可见波长范围内获得高于2.0的折射率和接近零的消光系数。此外，压印抗蚀剂材料允许在大面积上制造无裂纹的纳米图案膜，并且适合于制造可印刷的光子结构。

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《Nanotechnology》 |2013年第6期|共6页
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Pina-Hernandez C.; Lacatena V.; Calafiore G.; Dhuey S.; Kravtsov K.; Goltsov A.; Olynick D.; Yankov V.; Cabrini S.; Peroz C.;
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1. A route for fabricating printable photonic devices with sub-10 nm resolution [J] . Pina-Hernandez C., Lacatena V., Calafiore G., Nanotechnology . 2013,第6期

机译：制造分辨率低于10 nm的可打印光子器件的途径
2. Sub-10 nm patterning of few-layer MoS_2 and MoSe_2 nanolectronic devices by oxidation scanning probe lithography [J] . Ryu Y. K., Dago A. I, He Y., Applied Surface Science . 2021,第Feba15期

机译：通过氧化扫描探针光刻氧化扫描探头μMOS_2和MOSE_2纳米刻痕装置的亚10 NM图案化
3. Silver/(sub-10 nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism [J] . Nanotechnology . 2020,第16期

机译：硅/（亚10 NM）氧化铪 - 氧化物基电阻开关装置：特性和切换机构
4. On Wavelength Assignment and Deflection Routing for Contention Resolution in Burst Switched Photonic Networks [C] . Xi WANG, Hiroyuki MORIKAWA, Tomonori AOYAMA Seventh Optoelectronics and Communications Conference, Jul 8-12, 2002, Yokohama Kanagawa, Japan . 2002

机译：突发交换光子网络中用于竞争解决的波长分配和偏转路由
5. Photonic devices fabricated with photonic area lithographically mapped process. [D] . Zhou, Yaling. 2009

机译：用光子区域光刻制图工艺制造的光子器件。
6. In-chip microstructures and photonic devices fabricated by nonlinear laser lithography deep inside silicon [O] . Onur Tokel, Ahmet Turnali, Ghaith Makey, -1

机译：硅内部深处的非线性激光光刻制造的芯片内微结构和光子器件
7. Deflection Routing-Compatible Wavelength Assignment for Contention Resolution in Burst Switched Photonic Networks [O] . Xi Wang, Hiroyuki Morikawa, Tomonori Aoyama 2002

机译：突发交换光子网络中用于偏转解决的偏转路由兼容波长分配
8. Printable Integrated Photonic Devices. [R] . Peroz, C., Munechika, K., Pina-Hernandez, C., 2016

机译：可印刷集成光子器件。

A route for fabricating printable photonic devices with sub-10 nm resolution

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