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Influence of deposition substrate temperature on the morphology and molecular orientation of chloroaluminum phthalocyanine films as well the performance of organic photovoltaic cells

机译:沉积衬底温度对氯铝酞菁薄膜的形貌和分子取向以及有机光伏电池性能的影响

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摘要

The dependence of the morphology of neat chloroaluminum phthalocyanine (ClAlPc) films on substrate temperature (T-sub) during deposition is investigated by variable angle spectroscopic ellipsometry (VASE), x-ray diffraction (XRD), and atomic force microscopy (AFM) to obtain detailed information about the molecular orientation, phase separation, and crystallinity. AFM images indicate that both grain size and root mean square (RMS) roughness noticeably increase with T-sub both in neat and blend films. Increasing T-sub from room temperature to 420 K increases the horizontal orientation of the ClAlPc molecules with an increase of the mean molecular tilt angle from 60.13 degrees (300 K) to 65.86 degrees (420 K). The UV-vis absorption band of the corresponding films increases and the peak wavelength slightly red shifts with the T-sub increase. XRD patterns show a clear diffraction peak at T-sub over 390 K, implying the p-stacking of interconnected ClAlPc molecules at high T-sub. Planar and bulk heterojunction (BHJ) photovoltaic cells containing pristine ClAlPc films and ClAlPc: C-60 blend films fabricated at T-sub of 390 K show increases in the power conversion efficiency (eta(PCE)) of 28% (eta(PCE) = 3.12%) and 36% (eta(PCE) = 3.58%), respectively, relative to devices as-deposited at room temperature. The maximum short circuit current in BHJs is obtained at 390 K in the T-sub range from 300 K to 450 K.
机译:通过可变角光谱椭圆偏光法(VASE),X射线衍射(XRD)和原子力显微镜(AFM)研究了纯氯铝酞菁(ClAlPc)膜的形态对沉积过程中衬底温度(T-sub)的依赖性。获得有关分子取向,相分离和结晶度的详细信息。 AFM图像表明,在纯净和混合膜中,晶粒尺寸和均方根(RMS)粗糙度均随T-sub的增加而显着增加。 T-sub从室温增加到420 K,ClAlPc分子的水平取向增加,平均分子倾斜角从60.13度(300 K)增加到65.86度(420 K)。相应薄膜的紫外可见吸收带增加,并且随着T-sub的增加,峰值波长略微红移。 XRD图谱显示在390 K以上的T-sub处有清晰的衍射峰,这意味着互连的ClAlPc分子在高T-sub处p堆积。包含原始的ClAlPc薄膜和在390 K的T-sub上制造的ClAlPc:C-60混合薄膜的平面和整体异质结(BHJ)光伏电池的功率转换效率(eta(PCE))提高了28%(eta(PCE)相对于室温下沉积的设备,分别为3.12%)和36%(eta(PCE)= 3.58%)。在300 K至450 K的T-sub范围内,以390 K获得BHJs中的最大短路电流。

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