• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >Size dependent bipolar resistance switching of NiO nanodots for low-power and multistate operation
【24h】

Size dependent bipolar resistance switching of NiO nanodots for low-power and multistate operation

机译：NiO纳米点的尺寸依赖性双极电阻切换，用于低功率和多态操作

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

NiO nanodots of various sizes were fabricated via anodic oxidation induced through atomic force microscopy (AFM) nanolithography on an 18 nm thick Ni thin film, and their resistance switching properties were investigated using conductive AFM. We found that NiO nanodots with a medium size of around 15 nm height showed clear bipolar resistance switching. A threshold switching was observed in the NiO nanodots with a larger size due to having a much thinner bottom Ni layer left after oxidation. By adjusting the range of the sweeping voltage, the high resistance state can be controlled to realize multi-state switching. The power consumption during the switching process induced by the AFM tip was found to be lower than the reported power values of the NiO thin film-or NiO nanowires-based resistance switching devices.
机译：通过在18 nm厚的Ni薄膜上通过原子力显微镜（AFM）纳米光刻技术诱导的阳极氧化，制备了各种尺寸的NiO纳米点，并使用导电AFM研究了它们的电阻切换特性。我们发现中等大小的15纳米高的NiO纳米点显示出清晰的双极电阻切换。在NiO纳米点中观察到阈值转换，这是由于在氧化后留下的底部Ni层要薄得多，因此尺寸较大。通过调整扫描电压的范围，可以控制高电阻状态以实现多状态切换。发现由AFM尖端引起的开关过程中的功耗低于基于NiO薄膜或基于NiO纳米线的电阻开关器件的报告功率值。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号