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Nanoscale conductive pattern of the homoepitaxial AIGaN/GaN transistor

机译：同质外延AIGaN / GaN晶体管的纳米级导电图案

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摘要

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 degrees C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (I-ds > 1 Amm(-1)) to be defined (0.5 A mm(-1) at 300 degrees C). The vertical breakdown voltage has been determined to be similar to 850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.
机译：在氮化镓（GaN）上研究了基于氮化镓（GaN）的缓冲/势垒生长和形态，晶体管电响应（25-310摄氏度）和同质外延AlGaN / GaN高电子迁移率晶体管（HEMT）的纳米级图案。微米和纳米级。低通道薄层电阻和增强的散热性能可定义出高导电性的HEMT晶体管（I-ds> 1 Amm（-1））（在300摄氏度时为0.5 A mm（-1））。垂直击穿电压已确定为类似于850 V，其中垂直漏-体（或栅-体）电流遵循跳跃机制，激活能量为350 meV。导电原子力显微镜下的纳米级电流图形并未明确遵循分子束外延AlGaN / GaN的形态，但表明FS-GaN衬底存在一系列优先的导电斑点（导电贴片）。估计的斑块密度和表观随机分布似乎都与通过阴极发光观察到的边缘凹位错相关。源于FS-GaN衬底的次表面边缘凹坑位错导致HEMT肖特基栅极内的势垒高度不均匀，从而产生次阈值电流。

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