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Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature

机译：通过低温退火减少在镍上生长的AB叠层多层石墨烯的层数

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摘要

Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 degrees C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 degrees C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.
机译：控制通过化学气相沉积生长的石墨烯的层数对于大规模应用石墨烯至关重要。我们在这里提出石墨烯的蚀刻工艺，该工艺可以在生长后立即应用以控制层数。我们在高温（T = 900摄氏度）下使用镍（Ni）箔生产多层AB堆叠石墨烯（MLG）。蚀刻工艺基于在生长室内部相对较低的温度（T = 450摄氏度）下在氢气/氩气气氛中对样品进行退火的工艺。蚀刻的程度主要由退火过程的持续时间控制。使用拉曼光谱法，我们证明层的数量减少了，从MLG变为几层AB堆叠的石墨烯，在某些情况下变为靠近基材的随机取向的几层石墨烯。此外，我们的方法具有显着的优势，即不会在样品中引入缺陷，从而保持了其原始的高质量。这个事实以及我们的方法使用的低温使其成为在热预算较低的过程中控制已生长的石墨烯层数的理想选择。

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