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Fluorinated CYTOP passivation effects on the electrical reliability of multilayer MoS2 field-effect transistors

机译：氟化CYTOP钝化对多层MoS2场效应晶体管电可靠性的影响

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摘要

We demonstrated highly stable multilayer molybdenum disulfide (MoS2) field-effect transistors (FETs) with negligible hysteresis gap (Delta V-HYS similar to 0.15 V) via a multiple annealing scheme, followed by systematic investigation for long-term air stability with time (similar to 50 days) of MoS2 FETs with (or without) CYTOP encapsulation. The extracted lifetime of the device with CYTOP passivation in air was dramatically improved from 7 to 377 days, and even for the short-term bias stability, the experimental threshold voltage shift, outstandingly well-matched with the stretched exponential function, indicates that the device without passivation has approximately 25% larger the barrier distribution (Delta E-B = k(B)T(o)) than that of a device with passivation. This work suggests that CYTOP encapsulation can be an efficient method to isolate external gas (O-2 and H2O) effects on the electrical performance of FETs, especially with low-dimensional active materials like MoS2.
机译：我们通过多重退火方案展示了具有可忽略的磁滞间隙（Delta V-HYS类似于0.15 V）的高度稳定的多层二硫化钼（MoS2）场效应晶体管（FET），随后系统研究了长期空气稳定性随时间的变化（大约有50天的MoS2 FET，且带有（或不带有）CYTOP封装。 CYTOP钝化在空气中的器件的提取寿命从7天显着提高到377天，即使对于短期偏置稳定性，实验阈值电压漂移也与拉伸指数函数非常匹配，表明该器件没有钝化的器件的势垒分布（ΔEB= k（B）T（o））比具有钝化的器件的势垒分布大25％。这项工作表明，CYTOP封装可以是一种隔离外部气体（O-2和H2O）对FET的电性能的影响的有效方法，特别是对于像MoS2这样的低尺寸活性材料而言。

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