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首页> 外文期刊>Nanotechnology >Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation
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Top-down, in-plane GaAs nanowire MOSFETs on an Al2O3 buffer with a trigate oxide from focused ion-beam milling and chemical oxidation

机译：在Al2O3缓冲液上的自上而下的平面内GaAs纳米线MOSFET，其三栅极氧化物来自聚焦离子束研磨和化学氧化

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摘要

The top-down fabrication of an in-plane nanowire (NW) GaAs metal-oxide-semiconductor field-effect transistor (MOSFET) with a trigate oxide implemented by liquid-phase chemical-enhanced oxidation (LPCEO) is reported. A 2 mu m long channel having an effective cross section similar to 70. x. 220 nm(2) is directly fabricated into an epitaxial n(+)-GaAs layer. This in-plane NW structure is achieved by focused ion beam (FIB) milling and hydrolyzation oxidation resulting in electronic isolation from the substrate through a semiconductor-on-insulator structure with an n(+)-GaAs/Al2O3 layer stack. The channel is epitaxially connected to the mu m-scale source and drain within a single layer for a planar MOSFET to avoid any issues of ohmic contact and LPCEO to the NW. To fabricate a MOSFET, the top and the two sidewalls of the in-plane NW are oxidized by LPCEO to relieve the surface damage from FIB as well as to transform these surfaces to a similar to 15 nm thick gate oxide. This trigate device has threshold voltage similar to 0.14 V and peak transconductance similar to 35 mu S mu m(-1) with a subthreshold swing similar to 50 mV/decade and on/off ratio of drain current similar to 10(3), comparable to the performance of bottom-up NW devices.
机译：据报道，采用液相化学增强氧化（LPCEO）技术实现了具有三栅氧化物的面内纳米线（NW）GaAs金属氧化物半导体场效应晶体管（MOSFET）的自顶向下制造。 2微米长的通道，其有效横截面类似于70. x。直接将220 nm（2）制成外延n（+）-GaAs层。通过聚焦离子束（FIB）研磨和水解氧化可实现这种面内NW结构，从而通过具有n（+）-GaAs / Al2O3叠层的绝缘体上半导体结构从衬底进行电子隔离。该沟道在平面MOSFET的单层内外延连接至微米级的源极和漏极，从而避免了与NW的欧姆接触和LPCEO的任何问题。为了制造MOSFET，LPCEO氧化了平面内NW的顶部和两个侧壁，以减轻FIB对表面的损害，并将这些表面转变为厚度约15 nm的栅极氧化物。该三栅极器件的阈值电压近似于0.14 V，峰值跨导近似于35μSμm（-1），亚阈值摆幅近似于50 mV /十倍，漏极电流的开/关比类似于10（3）自底向上的NW设备的性能。

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