• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Nanotechnology >A straightforward and CMOS-compatible nanofabrication technique of periodic SiO2 nanohole arrays
【24h】

A straightforward and CMOS-compatible nanofabrication technique of periodic SiO2 nanohole arrays

机译：SiO2纳米孔阵列的直接且兼容CMOS的纳米制造技术

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, we have demonstrated a straightforward and CMOS-compatible nanofabrication technique that can produce well-ordered periodic SiO2 nanohole arrays in wafer-scale using a single amorphous silicon (alpha-Si) layer. It is the first time that alpha-Si material has been used as an etch mask to fabricate SiO2 nanostructures. Our results have shown that the diameter and shape of SiO2 nanohole arrays, with vertical and smooth sidewalls, can be precisely controlled by an optimized two-step etch process. The diameter and pitch of nanoholes as small as 45 nm and 140 nm, respectively, have been successfully achieved. Moreover, the technique is independent of any specific lithographic approaches and, therefore, is capable of fabricating SiO2 nanohole arrays with smaller diameters and higher densities. Furthermore, since our approach is completely metal-free, it can be incorporated and integrated very easily into the standard semiconductor industry. It has a potential for wide applications in micro-nanofabrication, and represents a big step towards mass production.
机译：在这项工作中，我们已经展示了一种简单且兼容CMOS的纳米加工技术，该技术可以使用单个非晶硅（alpha-Si）层以晶圆级生产井井有条的周期性SiO2纳米孔阵列。这是首次将α-Si材料用作蚀刻掩模以制造SiO2纳米结构。我们的结果表明，具有垂直和光滑侧壁的SiO2纳米孔阵列的直径和形状可以通过优化的两步蚀刻工艺精确控制。已经成功地实现了纳米孔的直径和节距分别小至45 nm和140 nm。而且，该技术独立于任何特定的光刻方法，因此能够制造具有较小直径和较高密度的SiO 2纳米孔阵列。此外，由于我们的方法完全不含金属，因此可以很容易地将其合并并集成到标准半导体行业中。它在微纳米加工中具有广泛的应用潜力，代表着向大规模生产迈出的一大步。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号