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Neutral wetting brush layers for block copolymer thin films using homopolymer blends processed at high temperatures

机译:使用在高温下加工的均聚物共混物的嵌段共聚物薄膜的中性润湿刷层

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摘要

Binary homopolymer blends of two hydroxyl-terminated polystyrene (PS-OH) and polymethylmethacrylate (PMMA-OH) homopolymers (Mn similar to 16000 g mol(-1)) were grafted on SiO2 substrates by high-temperature (T > 150 degrees C), short-time (t < 600 s) thermal treatments. The resulting brush layer was tested to screen preferential interactions of the SiO2 substrate with the different symmetric and asymmetric PS-b-PMMA block copolymers deposited on top of the grafted molecules. By properly adjusting the blend composition and the processing parameters, an efficient surface neutralization path was identified, enabling the formation, in the block copolymer film, of homogeneous textures of lamellae or cylinders perpendicularly oriented with respect to the substrate. A critical interplay between the phase segregation of the homopolymer blends and their grafting process on the SiO2 was observed. In fact, the polar SiO2 is preferential for the PMMA-rich phase that forms a homogeneous layer on the substrate, while the PS-rich phase is located at the polymer-air interface. During the thermal treatment, phase segregation and grafting proceed simultaneously. Complete wetting of the PS rich phase on the PMMA rich phase leads to the formation of a PS/PMMA bilayer. In this case, the progressive diffusion of PS chains toward the polymer-SiO2 interface during the thermal treatment allows tuning of the brush layer composition.
机译:通过高温(T> 150摄氏度)将两种羟基封端的聚苯乙烯(PS-OH)和聚甲基丙烯酸甲酯(PMMA-OH)均聚物的二元均聚物共混物(Mn类似于16000 g mol(-1))接枝到SiO2基底上短时间(t <600 s)热处理。测试所得刷层,以筛选SiO2基材与沉积在接枝分子顶部的不同对称和不对称PS-b-PMMA嵌段共聚物的优先相互作用。通过适当地调整共混物的组成和加工参数,可以确定有效的表面中和路径,从而在嵌段共聚物薄膜中形成相对于基材垂直取向的薄片或圆柱体的均匀质地。观察到均聚物共混物的相分离和它们在SiO2上的接枝过程之间的关键相互作用。实际上,极性SiO2优先于在基材上形成均质层的富含PMMA的相,而富含PS的相位于聚合物-空气界面。在热处理过程中,相分离和接枝同时进行。 PS富集相在PMMA富集相上的完全润湿导致PS / PMMA双层的形成。在这种情况下,在热处理过程中PS链朝聚合物-SiO2界面的逐渐扩散允许调整刷层成分。

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