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A deep etching mechanism for trench-bridging silicon nanowires

机译：沟槽桥接硅纳米线的深蚀刻机制

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摘要

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extreme topography, a characteristic of microsystems. The need for such a monolithic integration is fueled by the recent surge in the use of silicon nanowires as functional building blocks in various electromechanical and optoelectronic applications. This challenge is addressed in this work by introducing a topdown, silicon-on-insulator technology. The technology provides a pathway for obtaining wellcontrolled silicon nanowires along with the surrounding microscale features up to a three-orderof-magnitude scale difference. A two-step etching process is developed, where the first shallow etch defines a nanoscale protrusion on the wafer surface. After applying a conformal protection on the protrusion, a deep etch step is carried out forming the surrounding microscale features. A minimum nanowire cross-section of 35 nm by 168 nm is demonstrated in the presence of an etch depth of 10 mu m. Nanowire cross-sectional features are characterized via transmission electron microscopy and linked to specific process steps. The technology allows control on all dimensional aspects along with the exact location and orientation of the silicon nanowire. The adoption of the technology in the fabrication of micro and nanosystems can potentially lead to a significant reduction in process complexity by facilitating direct access to the nanowire during surface processes such as contact formation and doping.
机译：将具有已知取向和尺寸的单硅纳米线引入特定的布局位置是一个重大挑战。如果人们选择以具有极端地形（微系统的特征）的整体方式实现任务，那么挑战将变得更加艰巨。近年来，在各种机电和光电应用中，将硅纳米线用作功能构建块的浪潮激起了对这种单片集成的需求。通过引入自上而下的绝缘体上硅技术可解决此挑战。该技术提供了一种途径，用于获得控制良好的硅纳米线以及周围的微尺度特征，其尺度差异高达三个数量级。开发了两步刻蚀工艺，其中第一次浅刻蚀在晶圆表面上定义了纳米级突起。在突起上施加保形保护之后，执行深蚀刻步骤以形成周围的微尺度特征。在蚀刻深度为10μm的情况下，证明了35 nm x 168 nm的最小纳米线横截面。纳米线的横截面特征通过透射电子显微镜表征，并与特定的工艺步骤相关。该技术可以控制所有尺寸方面以及硅纳米线的确切位置和方向。通过在表面处理（例如接触形成和掺杂）过程中直接进入纳米线，在微米和纳米系统的制造中采用该技术有可能潜在地显着降低工艺复杂性。

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