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Optically transparent thin-film transistors based on 2D multilayer MoS2 and indium zinc oxide electrodes

机译：基于二维多层MoS2和铟锌氧化物电极的光学透明薄膜晶体管

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摘要

We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain electrodes, respectively, which showed more than 81% transmittance in the visible wavelength. In spite of a relatively large Schottky barrier between MoS2 and IZO, the n-type behavior with a field-effect mobility (mu(eff)) of 1.4 cm(2) V-1 s(-1) was observed in as-fabricated transparent MoS2 TFT. In order to enhance the performances of transparent MoS2 TFTs, a picosecond pulsed laser was selectively irradiated onto the contact region of the IZO electrodes. Following laser annealing, mu(eff) increased to 4.5 cm(2) V-1 s(-1), and the on-off current ratio (I-on/I-off) increased to 104, which were attributed to the reduction of the contact resistance between MoS2 and IZO.
机译：我们报告了使用多层二硫化钼（MoS2）作为有源通道，背面电极的铟锡氧化物（ITO）和源极/漏极电极的铟锌氧化物（IZO）制造的光学透明薄膜晶体管（TFT），分别在可见光波长下显示超过81％的透射率。尽管在MoS2和IZO之间有相对较大的肖特基势垒，但在装配好的结构中观察到n型行为具有1.4 cm（2）V-1 s（-1）的场效应迁移率（mu（eff））透明的MoS2 TFT。为了提高透明MoS2 TFT的性能，将皮秒脉冲激光选择性地照射到IZO电极的接触区域上。激光退火后，mu（eff）增加到4.5 cm（2）V-1 s（-1），并且开关电流比（I-on / I-off）增加到104，这归因于减小MoS2和IZO之间的接触电阻

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