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Low-temperature gas-barrier films by atomic layer deposition for encapsulating organic light-emitting diodes

机译：原子层沉积的低温阻气膜用于封装有机发光二极管

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摘要

Dependences of gas-barrier performance on the deposition temperature of atomic-layer-deposited (ALD) Al2O3, HfO2, and ZnO films were studied to establish low-temperature ALD processes for encapsulating organic light-emitting diodes (OLEDs). By identifying and controlling the key factors, i.e. using H2O2 as an oxidant, laminating Al2O3 with HfO2 or ZnO layers into AHO or AZO nanolaminates, and extending purge steps, OLED-acceptable gas-barrier performance (water vapor transmission rates similar to 10(-6) g m(-2) d(-1)) was achieved for the first time at a low deposition temperature of 50 degrees C in a thermal ALD mode. The compatibility of the low-temperature ALD process with OLEDs was confirmed by applying the process to encapsulate different types of OLED devices, which were degradation-free upon encapsulation and showed adequate lifetime during accelerated aging tests (pixel shrinkage <5% after 240 h at 60 degrees C/90% RH).
机译：研究了阻气性能对原子层沉积（ALD）Al2O3，HfO2和ZnO薄膜沉积温度的依赖性，以建立用于封装有机发光二极管（OLED）的低温ALD工艺。通过识别和控制关键因素，即使用H2O2作为氧化剂，将具有HfO2或ZnO层的Al2O3层压到AHO或AZO纳米层压板中，并扩展吹扫步骤，OLED可接受的阻气性能（水蒸气透过率类似于10（- 6）在热ALD模式下在50摄氏度的低沉积温度下首次实现gm（-2）d（-1））。低温ALD工艺与OLED的兼容性是通过将该工艺应用于不同类型的OLED器件而得到证实的，这些器件在封装后不会降解，并且在加速老化测试中显示出足够的寿命（在240 h下像素收缩<5％） 60摄氏度/ 90％相对湿度）。

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