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Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis

机译：嵌入电泳沉积金纳米粒子的免成型氧化石墨烯膜中的增强电阻转换

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摘要

Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were investigated for nonvolatile memories. The GOAu films were deposited by the electrophoresis method and as-grown films were found to be in the low resistance state; therefore no forming voltage was required to activate the devices for switching. The devices having an enlarged on/off ratio window of similar to 10(6) between two resistance states at low voltages (<1 V) for repetitive dc voltage sweeps showed excellent properties of endurance and retention. In these films Au Nps were uniformly dispersed over a large area that provided charge traps, which resulted in improved switching characteristics. Capacitance was also found to increase by a factor of similar to 10, when comparing high and low resistance states in GOAu and pristine GO devices. Charge trapping and de-trapping by Au Nps was the mechanism responsible for the improved switching characteristics in the films.
机译：具有低开关电压的免成型电阻式随机存取存储器（ReRAM）器件是其商业应用的先决条件。在这项研究中，针对非易失性存储器，研究了嵌入金纳米颗粒（Au Nps）的氧化石墨烯（GO）膜的无形成电阻切换特性，该开关在非常低的切换电压下具有增强的开/关比。通过电泳法沉积GOAu膜，发现成膜后的膜处于低电阻状态。因此不需要形成电压来激活用于开关的装置。在低电压（<1 V）下，两个电阻状态之间的开/关比窗口增大了，类似于10（6），用于重复的dc电压扫描，该器件表现出出色的耐久性和保持性。在这些膜中，Au Nps均匀地分散在提供电荷陷阱的大面积上，从而改善了开关特性。当比较GOAu和原始GO器件的高阻状态和低阻状态时，电容也增加了大约10倍。 Au Nps进行的电荷俘获和去俘获是改善薄膜开关特性的机制。

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