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High on/off ratio photosensitive field effect transistors based on few layer SnS2

机译：基于少量SnS2的高通/断比光敏场效应晶体管

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摘要

2D layered SnS2 nanosheets have attracted increasing research interest due to their highly anisotropic structural, electrical, optical, and mechanical properties. Here, through mechanical exfoliation, few-layer SnS2 was obtained from as-synthesized many-layered bulk SnS2. Micro-characterization and Raman study demonstrate the hexagonal symmetry structure of the nanosheets so fabricated. The energy band structures of both SnS2 bulk and monolayer were investigated comparatively. A highly photosensitive field effect transistor based on the obtained few-layer SnS2 nanosheets was fabricated, which shows a high I-photo/I-dark ratio of 10(3), and keeps the responsivity and external quantum efficiency (EQE) at a realistic level of 8.5 AW(-1) and 1.2 x 10(3)% respectively. This 2D structured high on/off ratio photosensitive field effect device may find promising potential applications in functional electronic/optoelectronic devices or systems.
机译：二维层状SnS2纳米片由于其高度各向异性的结构，电，光学和机械性能而吸引了越来越多的研究兴趣。在此，通过机械剥落，从刚合成的多层本体SnS2获得了多层SnS2。微表征和拉曼研究证明了如此制造的纳米片的六边形对称结构。比较研究了SnS2体和单层的能带结构。基于获得的几层SnS2纳米片制造了高光敏场效应晶体管，该晶体管的I-photo / I-dark比率高，为10（3），并保持了实际的响应度和外部量子效率（EQE）分别为8.5 AW（-1）和1.2 x 10（3）％。这种二维结构的高开/关比光敏场效应器件可以在功能性电子/光电子器件或系统中找到有希望的潜在应用。

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