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首页> 外文期刊>Nanotechnology >Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films
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Domain wall conductivity in semiconducting hexagonal ferroelectric TbMnO3 thin films

机译：半导电六方铁电体TbMnO3薄膜的畴壁电导率

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摘要

Although enhanced conductivity of ferroelectric domain boundaries has been found in BiFeO3 and Pb(Zr,Ti)O-3 films as well as hexagonal rare-earth manganite single crystals, the mechanism of the domain wall conductivity is still under debate. Using conductive atomic force microscopy, we observe enhanced conductance at the electrically-neutral domain walls in semiconducting hexagonal ferroelectric TbMnO3 thin films where the structure and polarization direction are strongly constrained along the c-axis. This result indicates that domain wall conductivity in ferroelectric rare-earth manganites is not limited to charged domain walls. We show that the observed conductivity in the TbMnO3 films is governed by a single conduction mechanism, namely, the back-to-back Schottky diodes tuned by the segregation of defects.
机译：尽管在BiFeO3和Pb（Zr，Ti）O-3薄膜以及六角形稀土锰矿单晶中发现了铁电畴边界电导率的提高，但畴壁电导率的机制仍在争论中。使用导电原子力显微镜，我们观察到在半导体六边形铁电体TbMnO3薄膜的电中性畴壁处的电导增强，其中该结构和极化方向沿c轴受到强烈约束。该结果表明，铁电稀土锰矿中的畴壁电导率不限于带电畴壁。我们表明，在TbMnO3薄膜中观察到的电导率受单一传导机制支配，即通过缺陷的分离而调整的背对背肖特基二极管。

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