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Doping evaluation of InP nanowires for tandem junction solar cells

机译:串联结太阳能电池InP纳米线的掺杂评估

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In order to push the development of nanowire-based solar cells further using optimized nanowire diameter and pitch, a doping evaluation of the nanowire geometry is necessary. We report on a doping evaluation of n-type InP nanowires with diameters optimized for light absorption, grown by the use of metal-organic vapor phase epitaxy in particle-assisted growth mode using tetraethyltin (TESn) as the dopant precursor. The charge carrier concentration was evaluated using four-probe resistivity measurements and spatially resolved Hall measurements. In order to reach the highest possible nanowire doping level, we set the TESn molar fraction at a high constant value throughout growth and varied the trimethylindium (TMIn) molar fraction for different runs. Analysis shows that the charge carrier concentration in nanowires grown with the highest TMIn molar fraction (not leading to kinking nanowires) results in a low carrier concentration of approximately 10(16) cm(-3). By decreasing the molar fraction of TMIn, effectively increasing the IV/III ratio, the carrier concentration increases up to a level of about 10(19) cm(-3), where it seems to saturate. Axial carrier concentration gradients along the nanowires are found, which can be correlated to a combination of changes in the nanowire growth rate, measured in situ by optical reflectometry, and polytypism of the nanowires observed in transmission electron microscopy.
机译:为了进一步利用优化的纳米线直径和间距推动基于纳米线的太阳能电池的开发,必须对纳米线的几何形状进行掺杂评估。我们报告了对n型InP纳米线的掺杂评估,该纳米线的直径针对光吸收进行了优化,通过使用金属有机气相外延在四乙基锡(TESn)作为掺杂剂前体的颗粒辅助生长模式中生长。使用四探针电阻率测量和空间分辨霍尔测量来评估载流子浓度。为了达到最高的纳米线掺杂水平,我们在整个生长过程中将TESn摩尔分数设置为较高的恒定值,并针对不同的运行更改三甲基铟(TMIn)摩尔分数。分析表明,以最高TMIn摩尔分数生长的纳米线中的电荷载流子浓度(不导致纽结纳米线)导致大约10(16)cm(-3)的低载流子浓度。通过降低TMIn的摩尔分数,有效地增加IV / III比,载流子浓度增加到大约10(19)cm(-3)的水平,在这里它似乎饱和了。发现沿着纳米线的轴向载流子浓度梯度,其可以与纳米线生长速率的变化,通过光学反射法原位测量和在透射电子显微镜中观察到的纳米线的多型性的组合相关。

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