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Catalyst-free growth of InAs nanowires on Si (111) by CBE

机译：CBE在Si（111）上无催化剂生长InAs纳米线

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摘要

We investigate a growth mechanism which allows for the fabrication of catalyst-free InAs nanowires on Si (111) substrates by chemical beam epitaxy. Our growth protocol consists of successive low-temperature (LT) nucleation and high-temperature growth steps. This method produces non-tapered InAs nanowires with controllable length and diameter. We show that InAs nanowires evolve from the islands formed during the LT nucleation step and grow truly catalyst-free, without any indium droplets at the tip. The impact of different growth parameters on the nanowire morphology is presented. In particular, good control over nanowire aspect ratio is demonstrated. A better understanding of the growth process is obtained through the development of a theoretical model combining the diffusion-induced growth scenario with some specific features of the catalyst-free growth mechanism, along with the analysis of the V/III flow ratio influencing material incorporation. As a result, we perform a full mapping of the nanowire morphology versus growth parameters which provides useful general guidelines on the self-induced formation of III-V nanowires on silicon.
机译：我们研究了一种生长机制，该机制允许通过化学束外延在Si（111）衬底上制造无催化剂的InAs纳米线。我们的生长方案包括连续的低温（LT）成核和高温生长步骤。该方法产生具有可控制的长度和直径的非锥形InAs纳米线。我们表明，InAs纳米线是从LT成核步骤中形成的岛中演化而来的，并且真正地无催化剂生长，尖端无任何铟滴。提出了不同的生长参数对纳米线形态的影响。特别地，证明了对纳米线纵横比的良好控制。通过将扩散诱导的生长情况与无催化剂生长机理的某些特定特征相结合的理论模型的发展，以及对影响材料掺入的V / III流量比的分析，可以得到对生长过程的更好理解。结果，我们对纳米线的形态与生长参数进行了完整的映射，从而为在硅上自行诱导形成III-V纳米线提供了有用的一般指导。

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