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首页> 外文期刊>RSC Advances >Capping ligand infrared absorption and dopant photoluminescence spectroscopy provides a comprehensive picture to probe dopant spatial location in semiconductor nanoparticles
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Capping ligand infrared absorption and dopant photoluminescence spectroscopy provides a comprehensive picture to probe dopant spatial location in semiconductor nanoparticles

机译：盖帽配体红外吸收和掺杂剂光致发光光谱学提供了全面的图片来探测半导体纳米颗粒中的掺杂剂空间位置

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摘要

The spatial location of a foreign species (dopant) in a semiconductor nanoparticle matrix is probed by monitoring the infrared absorption and photoluminescence spectroscopy of the capping ligand and dopant moieties respectively at room temperature. The results have been rationalized within the domain of observables in each experiment and argued to provide a comprehensive picture in tracking the core and surface localized terbium cations that are incorporated in zinc sulfide nanoparticles. The progression of luminescence quantum yield of the core and surface localized terbium cations with doping extent induced variation has been found to be different. The generality of the experimental observations has been demonstrated with the corresponding europium incorporated nanoparticles.
机译：通过在室温下分别监测封端配体和掺杂剂部分的红外吸收和光致发光光谱，来探测半导体纳米颗粒基质中异物（掺杂剂）的空间位置。在每个实验的可观察范围内，对结果进行了合理化处理，并认为该结果可为跟踪硫化锌纳米颗粒中掺入的核和表面局部ter阳离子提供全面的描述。已经发现，核和表面局部ter阳离子的发光量子产率随掺杂程度的变化而变化。实验观察的普遍性已经用相应的掺入nanoparticles的纳米颗粒证明。

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