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首页> 外文期刊>RSC Advances >Observation of the effects of Bi-deficiency on ferroelectric and electrical properties in Bi(1+x)FeO3/La0.65Sr0.35MnO3 heterostructures via atomic force microscopy
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Observation of the effects of Bi-deficiency on ferroelectric and electrical properties in Bi(1+x)FeO3/La0.65Sr0.35MnO3 heterostructures via atomic force microscopy

机译：通过原子力显微镜观察Bi缺陷对Bi（1 + x）FeO3 / La0.65Sr0.35MnO3异质结构中铁电和电性能的影响

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摘要

Bi(1+x)FeO3 thin films with different Bi contents (x = 0%, 5%, and 10%) were grown on (001) SrTiO3 substrates with La0.65Sr0.35MnO3 (LSMO) buffered layers via pulsed laser deposition. The effects of Bi deficiencies on the ferroelectric and electrical properties of Bi(1+x)FeO3/LSMO heterostructures are distinguished and investigated using various advanced and powerful techniques based on atomic force microscopy (piezoresponse force microscopy, electric force microscopy, surface Kelvin probe force microscopy and conductive atomic force microscopy). The results show an enhancement in ferroelectric properties, an improvement in electrical properties and a decrease in conductivity of Bi(1+x)FeO3 thin films with decreasing Bi deficiencies; these could be explained by the changes in interfacial interaction and energy bands. The investigations could pave a way to improving the Bi(1+x)FeO3 films' performance by controlling Bi deficiencies.
机译：通过脉冲激光沉积在具有La0.65Sr0.35MnO3（LSMO）缓冲层的（001）SrTiO3衬底上生长具有不同Bi含量（x = 0％，5％和10％）的Bi（1 + x）FeO3薄膜。 Bi缺陷对Bi（1 + x）FeO3 / LSMO异质结构的铁电和电学性质的影响已被区分并使用基于原子力显微镜（Piezoresponse力显微镜，电镜，表面开尔文探针力）的各种先进而强大的技术进行了研究显微镜和导电原子力显微镜）。结果表明，随着Bi缺陷的减少，铁电性能增强，电性能提高，Bi（1 + x）FeO3薄膜的电导率降低。这些可以通过界面相互作用和能带的变化来解释。这些研究可以为通过控制Bi缺陷改善Bi（1 + x）FeO3薄膜的性能铺平道路。

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