• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates
【24h】

Growth mechanism for alternating supply epitaxy: the unique pathway to achieve uniform silicon carbide films on multiple large-diameter silicon substrates

机译：交替供应外延的生长机制：在多个大直径硅衬底上实现均匀碳化硅膜的独特途径

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Low-cost large-diameter cubic silicon carbide (3C-SiC) film grown on silicon (Si) has been demonstrated to have a wide range of applications in photonics, electronics, photoelectrochemistry and micro-electromechanical system technologies. In this paper, the epitaxial growth of SiC on Si by low-pressure chemical vapour deposition is investigated. Two modes were employed to supply the precursors: the alternating supply and the simultaneous supply. Compared with SiC films grown at the same temperature by simultaneous supply epitaxy method, the SiC grown by alternating supply epitaxy (ASE) method has better crystallinity, smoother surface, and better thickness uniformity as confirmed by X-ray diffraction and atomic force microscopy characterisation. We propose the growth mechanism for ASE growth of 3C-SiC and validate it in detail experimentally. It is found that, Si deposition on SiC follows either Stranski-Krastanov mode or island growth mode, while SiC formation proceeds in two possible reaction paths: redistributing of the formed Si islands or smoothing of the formed SiC islands by decomposition migration process. Both reaction paths are driven by minimizing the surface free energy and reducing dangling bonds density. In summary, the key features of ASE are: (1) Si has a longer diffusion length and thus higher probability to adhere to a crystallographically favourable position; (2) undesirable gas phase reactions can be avoided. The obtained results indicate that ASE is a unique and economically viable method to prepare uniform 3C-SiC on multiple large-diameter Si wafers.
机译：在硅（Si）上生长的低成本大直径立方碳化硅（3C-SiC）膜已被证明在光子，电子，光电化学和微机电系统技术中具有广泛的应用。本文研究了通过低压化学气相沉积法在Si上外延生长SiC。采用两种模式来供应前体：交替供应和同时供应。 X射线衍射和原子力显微镜表征证实，与同时供应外延法在相同温度下生长的SiC膜相比，通过交替供应外延（ASE）法生长的SiC膜具有更好的结晶度，更光滑的表面和更好的厚度均匀性。我们提出了3C-SiC ASE生长的生长机理，并通过实验进行了详细验证。发现，SiC在SiC上的沉积遵循Stranski-Krastanov模式或岛生长模式，而SiC的形成在两种可能的反应路径中进行：所形成的Si岛的重新分布或通过分解迁移过程所形成的SiC岛的平滑。通过最小化表面自由能并降低悬空键密度来驱动两条反应路径。总而言之，ASE的主要特征是：（1）Si具有更长的扩散长度，因此有更高的附着在晶体学上有利位置的可能性; （2）可以避免不希望的气相反应。获得的结果表明，ASE是在多个大直径Si晶片上制备均匀3C-SiC的独特且经济可行的方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号