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Trimming of high-Q-factor silicon ring resonators by electron beam bleaching

机译:通过电子束漂白对高Q因数的硅环形谐振器进行微调

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摘要

We demonstrate a novel position-resolved resonance trimming strategy for silicon ring resonators. Ring resonators are covered with a chromophore-doped guest host polymer cladding. Illumination of the polymer cladding with high-energy electrons causes a bleaching of the chromophore molecules. Bleaching of the chromophores induces a reduction of the polymer refractive index, which can be used to trim the resonance frequency of the ring resonators. A maximum refractive index change of 0.06 and a TM polarization resonance shift of 16.4 nm have been measured. A Q factor of 20,000 before bleaching remains unaltered after the electron beam exposure process.
机译:我们展示了一种新型的硅环谐振器位置分辨谐振微调策略。环形谐振腔被发色团掺杂的客体主体聚合物覆层覆盖。高能电子对聚合物包层的照明导致发色团分子的漂白。发色团的漂白引起聚合物折射率的降低,其可用于修整环形谐振器的谐振频率。已测得最大折射率变化为0.06,TM偏振共振位移为16.4 nm。在电子束曝光后,漂白前的20,000的Q值保持不变。

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