High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability

Yulian Cao; Haiming Ji; Pengfei Xu; Yongxian Gu; Wenquan Ma; Tao Yang

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High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability

机译：具有高温稳定性的高亮度1.3μmInAs / GaAs量子点锥形激光器

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摘要

We demonstrate high-brightness 1.3 μm tapered lasers with high temperature stability by using p-doped InAs/GaAs quantum dots (QDs) as the active region. It is found that the beam quality factor M~2 for the devices is almost unchanged as the light power and temperature increase. The almost constant M~2 results from the p-doped QD active region.

机译：我们通过使用p掺杂InAs / GaAs量子点（QD）作为有源区，展示了具有高温稳定性的高亮度1.3μm锥形激光器。发现随着光功率和温度的升高，器件的光束质量因数M〜2几乎不变。几乎恒定的M〜2由p掺杂的QD有源区产生。

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《Optics Letters》 |2012年第19期|共3页
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Yulian Cao; Haiming Ji; Pengfei Xu; Yongxian Gu; Wenquan Ma; Tao Yang;
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专利

1. High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability [J] . Yulian Cao, Haiming Ji, Pengfei Xu, Optics Letters . 2012,第19期

机译：具有高温稳定性的高亮度1.3μmInAs / GaAs量子点锥形激光器
2. High-Temperature 1.3 μm InAs/GaAs Quantum Dot Lasers on Si Substrates Fabricated by Wafer Bonding [J] . Katsuaki Tanabe, Timothy Rae, Katsuyuki Watanabe, _Applied Physics Express . 2013,第8期

机译：晶圆键合在硅衬底上的高温1.3μmInAs / GaAs量子点激光器
3. Temperature Compensation for Threshold Current and Slope Efficiency of 1.3μm InAs/GaAs Quantum-Dot Lasers by Facet Coating Design [J] . XU Peng-Fei, YANG Tao, JI Hai-Ming, 中国物理快报：英文版 . 2011,第004期
4. High brightness InAs/GaAs quantum dot tapered laser at 1.3 μm with high temperature stability [C] . Yu-Lian CAO, Peng-fei XU, Hai-Ming JI, Semiconductor lasers and applications IV . 2010

机译：1.3μm高亮度InAs / GaAs量子点锥形激光器，具有高温稳定性
5. Characterization and modeling of 1.3 mum InAs quantum-dot lasers. [D] . Dikshit, Amit A. 2006

机译：1.3毫米InAs量子点激光器的表征和建模。
6. Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers [O] . Xiang-Bin Su, Ying Ding, Ben Ma, 2018

机译：消除用于制备1.3μm量子点激光器的InAs / GaAs量子点中的双峰尺寸
7. Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers [O] . Masse, NF, Sweeney, SJ, Marko, IP, 2006

机译：p掺杂和本征1.3μmInAs / GaAs量子点激光器中增益的温度依赖性

High-brightness 1.3 μm InAs/GaAs quantum dot tapered laser with high temperature stability

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