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1.5 μm polarization entanglement generation based on birefringence in silicon wire waveguides

机译:硅线波导中基于双折射的1.5μm偏振纠缠生成

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摘要

In this Letter, the 1.5 μm polarization entanglement generation is realized in a silicon wire waveguide utilizing its birefringence. In this scheme, two orthogonal polarized correlated states are generated by scalar processes of spontaneous four-wave mixing (SFWM) in the quasi-transverse electrical and quasi-transverse magnetic modes, respectively. Meanwhile, the vector processes of SFWM are suppressed by the group birefringence in the waveguide. The maximum polarization entangled state is generated by optimizing the pump polarization, which is demonstrated by the experiments of two-photon interference and polarization indistinguishability at one side. The fringe visibilities of two-photon interferences are 96.8 ± 4.7% and 86.0 ± 3.7% under two nonorthogonal polarization detection settings, respectively. This scheme provides a simple way to realize silicon integrated sources for 1.5 μm polarization entanglement generation.
机译:在这封信中,利用双折射在硅线波导中实现了1.5μm的偏振纠缠。在该方案中,分别通过准横向电模式和准横向磁模式的自发四波混合(SFWM)的标量过程生成了两个正交的极化相关态。同时,通过波导中的组双折射抑制了SFWM的矢量过程。通过优化泵浦偏振来产生最大偏振纠缠态,这在一侧的双光子干涉和偏振不可分辨实验中得到了证明。在两个非正交偏振检测设置下,两个光子干涉的条纹可见度分别为96.8±4.7%和86.0±3.7%。该方案提供了一种简单的方法来实现用于1.5μm偏振纠缠生成的硅集成源。

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