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首页> 外文期刊>Optics Letters >Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence
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Observation of improved minority carrier lifetimes in high-quality Ge-on-insulator using time-resolved photoluminescence

机译：使用时间分辨光致发光观察高质量绝缘体上Ge的少数载流子寿命的改善

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摘要

We report improved minority carrier lifetimes in n-type-doped and tensile-strained germanium by measuring direct bandgap photoluminescence from germanium-on-insulator substrates with various levels of defect density. We first describe a method to fabricate a high-quality germanium-on-insulator substrate by employing direct wafer bonding and chemical-mechanical polishing. Raman spectroscopy measurement was performed to assess the purity of the transferred layer on an insulator. Using time-resolved photoluminescence decay measurement, we observe that minority carrier lifetimes can be improved by over a factor of 3 as the defective top interface of our material stack is removed. Our high-quality germanium-on-insulator should be an ideal platform for high-performance, germanium-based photonic devices for on-chip optical interconnects.
机译：我们报告了通过测量具有各种缺陷密度水平的绝缘体上锗衬底上的直接带隙光致发光，可以改善n型掺杂和拉伸应变锗中少数载流子的寿命。我们首先描述一种通过采用直接晶片键合和化学机械抛光的方法来制造高质量绝缘体上锗衬底的方法。进行拉曼光谱测量以评估绝缘体上转移层的纯度。使用时间分辨的光致发光衰减测量，我们观察到，由于去除了材料堆叠的有缺陷的顶部界面，少数载流子的寿命可以提高3倍以上。我们的高质量绝缘体上锗应该是用于片上光学互连的高性能基于锗的光子器件的理想平台。

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