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首页> 外文期刊>Optics Letters >High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm
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High-power temperature-stable GaInNAs distributed Bragg reflector laser emitting at 1180 nm

机译：高功率温度稳定的GaInNAs分布式布拉格反射器激光发射1180 nm

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We report a single-mode 1180 nm distributed Bragg reflector (DBR) laser diode with a high output power of 340 mW. For the fabrication, we employed novel nanoimprint lithography that ensures cost-effective, large-area, conformal patterning and does not require regrowth. The output characteristics exhibited outstanding temperature insensitivity with a power drop of only 30% for an increase of the mount temperature from 20 degrees C to 80 degrees C. The high temperature stability was achieved by using GaInNAs/GaAs quantum wells (QWs), which exhibit improved carrier confinement compared to standard InGaAs/GaAs QWs. The corresponding characteristic temperatures were T-0 = 110 K and T-1 = 160 K. Moreover, we used a large detuning between the peak wavelength of the material gain at room temperature and the lasing wavelength determined by the DBR. In addition to good temperature characteristics, GaInNAs/GaAs QWs exhibit relatively low lattice strain with direct impact on improving the lifetime of laser diodes at this challenging wavelength range. The single-mode laser emission could be tuned by changing the mount temperature (0.1 nm/degrees C) or the drive current (0.5 pm/mA). The laser showed no degradation in a room-temperature lifetime test at 900 mA drive current. These compact and efficient 1180 nm laser diodes are instrumental for the development of compact frequency-doubled yellow-orange lasers, which have important applications in medicine and spectroscopy. (C) 2016 Optical Society of America
机译：我们报告了具有340 mW的高输出功率的单模1180 nm分布式布拉格反射器（DBR）激光二极管。对于制造，我们采用了新颖的纳米压印光刻技术，以确保具有成本效益的大面积共形图案，并且不需要再生。输出特性表现出出色的温度不敏感度，对于将安装温度从20摄氏度提高到80摄氏度仅降低了30％的功率。通过使用GaInNAs / GaAs量子阱（QW）获得了高温稳定性与标准InGaAs / GaAs QW相比，改善了载流子限制。相应的特征温度为T-0 = 110 K和T-1 = 160K。此外，我们在室温下材料增益的峰值波长与DBR确定的激光波长之间使用了较大的失谐。除了良好的温度特性外，GaInNAs / GaAs QW还显示出较低的晶格应变，直接影响了在此挑战性波长范围内提高激光二极管的寿命。可以通过更改安装温度（0.1 nm /℃）或驱动电流（0.5 pm / mA）来调整单模激光发射。在室温电流测试中，在900 mA驱动电流下，该激光器没有显示出退化。这些紧凑而高效的1180 nm激光二极管有助于开发紧凑的倍频橙黄激光器，在医学和光谱学中具有重要的应用。 （C）2016美国眼镜学会

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