We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9, 9-dioctylfluorenyl-2; 7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)) diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849 cd/m(2), a current efficiency of 4.2 cd/A, and an external quantum efficiency of 2.5%. (C) 2016 Optical Society of America
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机译：我们报告了高荧光红色发射InP量子点（QD）的合成及其在制造高效率QD发光二极管（QLED）中的应用。量子点的核/壳异质结构经过精心设计，以适应具有成分梯度的ZnSeS中间壳和ZnS外壳的多壳结构。使用所得的InP / ZnSeS / ZnS QDs作为发光层，可以制造具有有机空穴传输层（HTL）和无机ZnO纳米粒子电子传输层的混合多层器件结构，从而可以进行所有溶液可加工的红色InP QLED。聚（9-乙烯基咔唑）或聚[（9，9-二辛基芴基-2; 7-二基）-co-（4,4'-（N-（4-仲丁基苯基））二苯胺）的两个HTL，分别将其空穴迁移率相差至少三个数量级的空穴用于QLED制造，并比较了这种与HTL相关的器件性能。我们最好的红色设备显示出优异的品质因数，例如2849 cd / m（2）的最大亮度，4.2 cd / A的电流效率和2.5％的外部量子效率。 （C）2016美国眼镜学会
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