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首页> 外文期刊>Optics Letters >Experimental demonstration of a two-mode (de)multiplexer based on a taper-etched directional coupler
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Experimental demonstration of a two-mode (de)multiplexer based on a taper-etched directional coupler

机译：基于锥形蚀刻定向耦合器的双模（解）复用器的实验演示

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摘要

We experimentally demonstrate a compact, low-cross talk and fabrication-tolerant two-mode (de)multiplexer on the silicon-on-insulator platform. The device consists of a silicon wire waveguide coupled to a taper-etched waveguide. The partially etched taper structure is used to relax fabrication tolerance and thus to ensure high mode-conversion efficiency. The device is 68 mu m in length, with a TE0-to-TE1 mode conversion loss of better than -0.8 dB demonstrated over the C-band wavelengths. In addition, the device demonstrates a low TE0-to-TE0 through waveguide insertion loss of better than -1.3 dB with modal cross talk lower than -26 dB, over a 65 nm wavelength range. Finally, we have experimentally demonstrated that the device is tolerant of fabrication errors of up to 20 nm. Better than -26 dB TE0-TE1 conversion loss with a cross talk lower than -23 dB over a 55 nm bandwidth has been obtained with a fabrication tolerance as large as 40 nm. (C) 2016 Optical Society of America
机译：我们通过实验证明了绝缘体上硅平台上的紧凑型，低串扰和耐制造性的双模（de）多路复用器。该装置由耦合到锥形蚀刻波导的硅线波导组成。使用部分蚀刻的锥度结构来放松制造公差，从而确保高模式转换效率。该器件的长度为68μm，在C波段波长上表现出的TE0至TE1模式转换损耗优于-0.8 dB。此外，该器件在65 nm波长范围内，通过波导的插入损耗显示出低于-1.3 dB的低TE0至TE0，模态串扰低于-26 dB。最后，我们已通过实验证明该器件可承受高达20 nm的制造误差。已经获得了优于-26 dB的TE0-TE1转换损耗，并且在55 nm带宽上的串扰低于-23 dB，制造公差高达40 nm。 （C）2016美国眼镜学会

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