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Super lattice effects in graphene on SiC(0001) and Ir(111) probed by ARPES

机译:ARPES探测的石墨烯对SiC(0001)和Ir(111)的超晶格效应

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We review the angle-resolved photoemission spectroscopy (ARPES) technique and its applications to epitaxially grown graphenes. In particular we discuss the extraction of symmetry-breaking factors associated with superlattice formation due to substrate lattice mismatch. For UHV grown graphene on SiC, which has a quasi-13 x 13 superlattice (with respect to graphene), no coupling vectors exist to break the chiral symmetry, and a gap at E-D is not observed. For graphene on Ir(111), lattice mismatch induces a well-known Moire pattern with 10 x 10 (relative to graphene) symmetry. Despite the fact that chirality should be preserved under this symmetry, energy gaps are found at the main as well as the mini-Dirac crossings. A simple tight binding model that neglects chirality can explain the observed miniband spectrum in graphene on Ir(111). (C) 2015 Elsevier B.V. All rights reserved.
机译:我们审查了角度分辨光发射光谱(ARPES)技术及其在外延生长石墨烯上的应用。特别是,我们讨论了由于基底晶格失配而导致与超晶格形成相关的对称破坏因子的提取。对于具有在准13 x 13超晶格(相对于石墨烯)的SiC上的UHV生长石墨烯,不存在破坏手性对称性的偶合矢量,并且未观察到E-D处的间隙。对于Ir(111)上的石墨烯,晶格失配会引起众所周知的摩尔纹,其对称性为10 x 10(相对于石墨烯)。尽管应该在这种对称性下保持手性,但在主Dirac交叉口和微型Dirac交叉口都发现了能隙。忽略手性的简单紧密结合模型可以解释在Ir(111)上石墨烯中观察到的微带光谱。 (C)2015 Elsevier B.V.保留所有权利。

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