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首页> 外文期刊>Physical chemistry chemical physics: PCCP >Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires
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Features of the piezo-phototronic effect on optoelectronic devices based on wurtzite semiconductor nanowires

机译：基于纤锌矿半导体纳米线的光电器件对压电效应的特征

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The piezo-phototronic effect, a three way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, utilizing the piezo-potential as a "gate" voltage to tune the charge transport/generation/recombination and modulate the performance of optoelectronic devices, has formed a new field and attracted lots of interest recently. The mechanism was verified in various optoelectronic devices such as light emitting diodes (LEDs), photodetectors and solar cells etc. The fast development and dramatic increasing interest in the piezo-phototronic field not only demonstrate the way the piezo-phototronic effects work, but also indicate the strong need for further research in the physical mechanism and potential applications. Furthermore, it is important to distinguish the contribution of the piezo-phototronic effect from other factors induced by external strain such as piezoresistance, band shifting or contact area change, which also affect the carrier behaviour and device performance. In this perspective, we review our recent progress on piezo-phototronics and especially focus on pointing out the features of piezo-phototronic effect in four aspects: I-V characteristics; c-axis orientation; influence of illumination; and modulation of carrier behaviour. Finally we proposed several criteria for describing the contribution made by the piezo-phototronic effect to the performance of optoelectronic devices. This systematic analysis and comparison wilt not only help give an in-depth understanding of the piezo-phototronic effect, but also work as guide for the design of devices in related areas.
机译：压电效应，是非中心对称半导体材料中压电，半导体和光子特性的三向耦合效应，利用压电势作为“门”电压来调节电荷的传输/产生/复合并调节性能光电器件的发展已经形成了一个新领域，并且最近引起了很多兴趣。该机制已在各种光电器件中得到验证，例如发光二极管（LED），光电探测器和太阳能电池等。压电光电领域的快速发展和日益增长的兴趣不仅证明了压电效应的工作方式，而且还证明了压电效应的工作方式。表明强烈需要进一步研究物理机理和潜在应用。此外，重要的是将压电效应与其他由外部应变引起的其他因素（例如，压阻，带位移或接触面积变化）区分开来，这也影响了载流子的性能和器件性能。从这个角度出发，我们回顾了我们在压电光电子学方面的最新进展，特别是着重从四个方面指出了压电光电子效应的特点： c轴方向;照明的影响;和载波行为的调制。最后，我们提出了几个标准来描述压电效应对光电器件性能的贡献。这种系统的分析和比较不仅有助于深入了解压电效应，而且还可以作为相关领域器件设计的指南。

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