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首页> 外文期刊>Journal of Semiconductors >Boron-doped III-V semiconductors for Si-based optoelectronic devices
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Boron-doped III-V semiconductors for Si-based optoelectronic devices

机译：基于SI的光电器件的硼掺杂III-V半导体

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摘要

Optoelectronic devices on silicon substrates are essential not only to the optoelectronic integrated circuit but also to low-cost lasers, large-area detectors, and so forth. Although heterogeneous integration of III-V semiconductors on Si has been welldeveloped, the thermal dissipation issue and the complicated fabrication process still hinders the development of these devices. The monolithic growth of III-V materials on Si has also been demonstrated by applying complicated buffer layers or interlayers. On the other hand, the growth of lattice-matched B-doped group-III-V materials is an attractive area of research. However, due to the difficulty in growth, the development is still relatively slow. Herein, we present a comprehensive review of the recent achievements in this field. We summarize and discuss the conditions and mechanisms involved in growing B-doped group-III-V materials. The unique surface morphology, crystallinity, and optical properties of the epitaxy correlating with their growth conditions are discussed, along with their respective optoelectronic applications. Finally, we detail the obstacles and challenges to exploit the potential for such practical applications fully.
机译：硅基板上的光电器件不仅必须于光电集成电路，而且是低成本的激光器，大面积探测器等。尽管SI对SI的III-V半导体的异构集成已经好开发，但热耗散问题和复杂的制造过程仍然阻碍了这些装置的开发。通过施加复杂的缓冲层或中间层，还证明了Si的III-V材料的单片生长。另一方面，格子匹配的B掺杂基团-III-V材料的生长是一种有吸引力的研究领域。然而，由于增长困难，发展仍然相对较慢。在此，我们对该领域最近的成就进行了全面审查。我们总结并讨论了生长B掺杂基-III-V材料的条件和机制。讨论了与其生长条件相关的独特表面形态，结晶度和光学性质以及各自的光电应用。最后，我们详细介绍了充分利用这种实际应用的潜力的障碍和挑战。

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