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首页> 外文期刊>Physica, B. Condensed Matter >Crystal structure, magnetic and electrical-transport properties of rare-earth-doped Sr2FeMoO6
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Crystal structure, magnetic and electrical-transport properties of rare-earth-doped Sr2FeMoO6

机译：稀土掺杂Sr2FeMoO6的晶体结构，磁和电输运性质

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摘要

Crystal structure, magnetic and electrical-transport properties of the rare-earth-doped compounds (Sr(1.85)Ln(0.15))FeMoO6 (Ln = Sr, La, Ce, Pr, Nd, Sin and Eu) have been investigated by means of X-ray diffraction, magnetic and electric measurements. All the samples are single phase and belong to the I4/m space group. Due to the competing contributions of electron doping and steric effects, the unit-cell volume of the doped compounds changes slightly and does not vary systematically with the ionic radius of the rare-earth ions. The temperature dependence of the magnetization of (Sr(1.85)Ln(0.15))FeMoO6 indicates that the Curie temperature of the doped compounds has increased upon doping, except for the Eu-doped compound. The saturation magnetization of the compounds at 5 K cannot be explained simply by considering the ferrimagnetic arrangement of the magnetic sublattices of Fe and Mo because of the magnetic contribution of rare-earth ions. However, the saturation magnetization at 100 K of the doped compounds exhibits a linear decrease with the increase of the anti-site defect concentration. Comparison of the saturation magnetization of the compounds at 5 and 100 K suggests that at 5 K the magnetic moments of Ce, Pr, Nd and Sin align parallel with that of Fe, while the magnetic moment of Eu is anti-parallel with that of Fe. The normalized resistivities of the parent and the La- and Sm-doped compounds exhibit a semiconductor-metal transition, while the Pr-, Nd- and Eu-doped compounds exhibit semiconducting behavior. (c) 2006 Elsevier B.V. All rights reserved.
机译：通过以下方法研究了稀土掺杂化合物（Sr（1.85）Ln（0.15））FeMoO6（Ln = Sr，La，Ce，Pr，Nd，Sin和Eu）的晶体结构，磁和电传输性质X射线衍射，磁和电测量。所有样本都是单相的，属于I4 / m空间组。由于电子掺杂和空间效应的竞争作用，掺杂化合物的晶胞体积会略有变化，并且不会随稀土离子的离子半径而系统地变化。 （Sr（1.85）Ln（0.15））FeMoO6的磁化强度与温度的关系表明，掺杂的化合物的居里温度在掺杂后有所增加，除了Eu掺杂的化合物。由于稀土离子的磁性作用，不能简单地通过考虑Fe和Mo的磁性亚晶格的亚铁磁性排列来解释化合物在5 K时的饱和磁化强度。然而，随着抗位缺陷浓度的增加，掺杂化合物在100 K时的饱和磁化强度呈线性下降。化合物在5 K和100 K时的饱和磁化强度的比较表明，在5 K时，Ce，Pr，Nd和Sin的磁矩与Fe的磁矩平行，而Eu的磁矩与Fe的磁矩反平行。 。母体和La和Sm掺杂的化合物的归一化电阻率表现出半导体金属跃迁，而Pr，Nd和Eu掺杂的化合物表现出半导体行为。 （c）2006 Elsevier B.V.保留所有权利。

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