• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Physica, B. Condensed Matter >Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method
【24h】

Photoluminescence properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method

机译：射频磁控溅射法制备高质量ZnO薄膜的光致发光性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We have investigated photoluminescence (PL) properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method. The X-ray-diffraction patterns indicate that the crystalline thin film is preferentially oriented along the [0001] crystal axis. By introducing a low-temperature buffer layer and by growing thin films at a high temperature of 600 degrees C, the crystal quality of ZnO thin films is markedly improved. In addition, we have found that ambience during a cooling process to room temperature after the deposition is another important factor to improve the PL properties; namely, the defect-related PL disappears and the free exciton PL with a sharp width is observed by cooling thin films in the presence of oxygen. Furthermore, under high-density excitation conditions, a PL band due to an exciton-exciton scattering process, the so-called P emission, is observed. (c) 2006 Elsevier B.V. All rights reserved.
机译：我们已经研究了通过射频磁控溅射方法制备的高质量ZnO薄膜的光致发光（PL）特性。 X射线衍射图表明晶体薄膜优选沿[0001]晶轴取向。通过引入低温缓冲层并通过在600℃的高温下生长薄膜，ZnO薄膜的晶体质量得到显着改善。此外，我们发现，沉积后冷却至室温的过程中的环境氛围是改善PL特性的另一个重要因素;即，通过在氧气存在下冷却薄膜，缺陷相关的PL消失并且观察到具有陡峭宽度的自由激子PL。此外，在高密度激发条件下，观察到由于激子-激子散射过程而产生的PL带，即所谓的P发射。 （c）2006 Elsevier B.V.保留所有权利。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号