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首页> 外文期刊>Physica, B. Condensed Matter >Vacancies in CZ silicon crystals observed by low-temperature ultrasonic measurements
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Vacancies in CZ silicon crystals observed by low-temperature ultrasonic measurements

机译：通过低温超声测量观察到的CZ硅晶体中的空位

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By means of the low-temperature ultrasonic measurements, we try to observe the single vacancies in the as-grown Czochralski (CZ) silicon crystal of high resistivity and commercial-base quality. The crystal ingot we adopt here is grown with the pulling rate gradually lowered to produce various regions of different point-defect states. The elastic constants C-T2g(T) and C-Eg(7) measured for the samples taken from the Pv-region exhibit the softening of the type C-Gamma(T) = C-Gamma((0)) [1-Delta(JT)/(T-Theta)] which was found in our previous study for the non-doped FZ silicon and attributed to the neutral vacancy. The response of the softening to the applied magnetic field is found to be the same as in the case of the non-doped FZ silicon. The samples in the Pi-region exhibit no such softening, confirming that the origin of the softening is due to the vacancies. A qualitative explanation is given to the measured distribution of the vacancy concentration. For the CZ silicon crystals, the vacancies can be well observed for the Pv-region only. (C) 2007 Elsevier B.V. All rights reserved.
机译：通过低温超声测量，我们尝试观察高电阻率和商业基础质量的生长的切克劳斯基（CZ）硅晶体中的单个空位。我们在这里采用的晶锭是随着提拉速率逐渐降低而生长的，以产生具有不同点缺陷状态的各个区域。为从Pv区域获取的样品测得的弹性常数C-T2g（T）和C-Eg（7）表现出C-Gamma（T）= C-Gamma（（0））类型的软化[1- Delta（JT）/（T-Theta）]在我们先前的研究中发现为非掺杂的FZ硅，并归因于中性空位。发现软化对施加的磁场的响应与未掺杂的FZ硅的情况相同。 Pi区域中的样品没有显示出这种软化，这证实了软化的起源是由于空位。定性解释了空位浓度的测量分布。对于CZ硅晶体，仅在Pv区可以很好地观察到空位。 （C）2007 Elsevier B.V.保留所有权利。

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