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首页> 外文期刊>Physica, B. Condensed Matter >Structural, optical and electrical studies on pulse electrodeposited CdIn2S4 thin films
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Structural, optical and electrical studies on pulse electrodeposited CdIn2S4 thin films

机译：脉冲电沉积CdIn2S4薄膜的结构，光学和电学研究

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CdIn2S4 thin films were prepared by pulse electrodeposition technique over F:SnO2 glass and stainless steel substrates in galvanostatic mode from an aqueous acidic bath containing CdSO4, InCl3 and Na2S2O3. The growth kinetics of the film has been studied and the deposition parameters such as electrolyte bath concentration, bath temperature, time of deposition, deposition current and pH of the bath are optimized. X-ray diffraction (XRD) analysis of the as deposited and annealed films shows polycrystalline nature. Energy dispersive analysis by X-ray (EDAX) confirms nearly stoichiometric CdIn2S4 nature of the film. Scanning electron microscope (SEM) studies show that, the deposited films are well adherent and grains are uniformly distributed over the surface of the substrate. The optical transmission spectra show a direct band gap of 2.16 eV. Conductivity measurements have been carried out at different temperatures and electrical parameters such as activation energy, trapped energy state and barrier heights etc. have been determined. (c) 2006 Elsevier B.V. All rights reserved.
机译：在恒电流模式下，从含有CdSO4，InCl3和Na2S2O3的酸性水浴中，通过恒电流模式在F：SnO2玻璃和不锈钢基板上通过脉冲电沉积技术制备CdIn2S4薄膜。已经研究了膜的生长动力学，并且优化了沉积参数，例如电解质浴浓度，浴温度，沉积时间，沉积电流和浴的pH。沉积和退火膜的X射线衍射（XRD）分析显示出多晶性质。 X射线（EDAX）的能量色散分析证实了该膜的化学计量接近CdIn2S4性质。扫描电子显微镜（SEM）研究表明，沉积的膜粘附良好，并且晶粒均匀地分布在基板表面上。光学透射光谱显示直接带隙为2.16 eV。已经在不同的温度下进行了电导率测量，并且已经确定了电参数，例如活化能，捕获的能态和势垒高度等。 （c）2006 Elsevier B.V.保留所有权利。

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